Saturday, April 20, 2024
Search
English
Optical Storage
Graphics Cards
General Computing
PC Parts
Digital Cameras
Consumer Electronics
Games
Mobiles
All News Categories
Older News
Optical Storage
Graphics Cards
General Computing
PC Parts
Digital Cameras
Consumer Electronics
Games
Cooling Systems
Mobiles
Software Reviews
Reviews Around the Web
Technology Previews
Essays
Interviews
Tech Views
Glossary
FAQ
Guides/How-To's
Firmware
Drivers
BIOS
Software
Media Tests
Drive Comparisons
DVD Media Formats
All Forums
Become Member
Today's Posts
Popular Topics
In-House
Optical Storage
Optical Storage Software
General
Consumer Electronics
Other
News Around The Web
Advertise
Links
Jobs
Site Map
News/Reviews Feed
Submit News
Polls
Competitions
Users' Privacy
Contact Us
About
Home
|
News
|
Reviews
|
Articles
|
Guides
|
Download
|
Expert Area
|
Forum
|
Site Info
Thursday, February 5, 2009
Samsung Announces Miniaturization Breakthrough With First 40nm Class DRAM
You are sending an email that contains the article
and a private message for your recipient(s).
Your Name:
Your e-mail:
* Required!
Recipient (e-mail):
*
Subject:
*
Introductory Message:
HTML/Text
(Photo: Yes/No)
(At the moment, only Text is allowed...)
Message Text:
Samsung has developed and validated what it says is the first DDR 2 DRAM chips produced with 40-nanometer process technology.
This 1Gb DDR2 component (x8) and a corresponding 1GB 800Mbps DDR2 SODIMM (small outline DRAM inline memory module) -- both to be processed at 40nm -- have been certified in the Intel Platform Validation program for use with the Intel GM45 series Express mobile chipsets.
With the technology, Samsung's productivity could increase by about 60 percent compared to the 50-nanometer technology it is currently using. In addition, 40-nanometer DRAM could reduce electricity usage by over 30 percent, compared to the 50-nanometer DRAM.
Samsung also said the migration to 40nm class process technology is expected to accelerate the time-to-market cycle by 50% -- to just one year.
The company plans to apply its 40nm class technology to also develop a 2Gb DDR3 device for mass production by the end of 2009.
Samsung developed the industry's first 60-nanometer DRAM in 2005, and 50-nanometer DRAM in 2006. The world's top memory chip maker said that its foreign rivals, which still use 50-60 nanometer technology, "will likely remain about one or two years behind in terms of manufacturing competitiveness."
Home
|
News
|
All News
|
Reviews
|
Articles
|
Guides
|
Download
|
Expert Area
|
Forum
|
Site Info
Site best viewed at 1024x768+ -
CDRINFO.COM
1998-2024 - All rights reserved
-
Privacy policy
-
Contact Us
.