Monday, March 27, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple Wins Design Patent Case In China
Uber Suspends Self-driving Car Program After Arizona Acident
LG's Mobile Payment Service Coming Soon
Samsung Backs Away From Restructuring Plan, Gears Up For Galaxy S8 Release
Microsoft Delivers Telemetry-free Windows 10 To China
Samsung Plans To Release New Curved TVs
ASUS STRIX GD30 Gaming Desktop Released
New Alcatel A30 and Moto G5 Plus Available On Amazon
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, August 27, 2014
Samsung Starts Mass Production Of First 3D TSV DDR4 Modules


Samsung has started mass producing the first 64 gigabyte (GB), double data rate-4 (DDR4), registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) "through silicon via" (TSV) package technology.

The new RDIMMs include 36 DDR4 DRAM chips, each of which consists of four 4-gigabit (Gb) DDR4 DRAM dies. The low-power chips are manufactured using Samsung's most advanced 20-nanometer (nm) class process technology and 3D TSV package technology.

Samsung's has also started producing 3D Vertical NAND (V-NAND) flash memory last year. While 3D V-NAND technology embraces high-rise vertical structures of cell arrays inside a monolithic die, 3D TSV is an innovative packaging technology that vertically interconnects stacked dies.

To build a 3D TSV DRAM package, the DDR4 dies are ground down as thin as a few dozen micrometers, then pierced to contain hundreds of fine holes. They are vertically connected through electrodes that are passed through the holes. As a result, the new 64GB TSV module performs twice as fast as a 64GB module that uses wire bonding packaging, while consuming approximately half the power.

In the future, Samsung believes that it will be able to stack more than four DDR4 dies using its 3D TSV technology, to create even higher density DRAM modules.



Previous
Next
Larger iPad Coming Next Year        All News        HP Recalls Millions Of Power Cords
Larger iPad Coming Next Year     PC Parts News      HP Recalls Millions Of Power Cords

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Backs Away From Restructuring Plan, Gears Up For Galaxy S8 Release
Samsung Plans To Release New Curved TVs
Samsung Adds 4G LTE Capability to Gear S3 Classic
Samsung and eSilicon Taped Out First 14nm Network Processor
Samsung Display Is Ramping Up Production To OLEDs For Tablets
Qualcomm Forced Samsung To Use Exynos SoCs Only In Galaxy Phones
CORSAIR Launches Fast and Beautiful VENGEANCE RGB DDR4
Samsung Galaxy Tab S3 To Retail For $600
Samsung's S8 to Support Facial Recognition for Payments, 1K Fps Shooter
Samsung On Track For 10nm FinFET Process Technology Production Ramp-up
Samsung SDI Showcases Powerful ESS Products At Energy Storage Europe
Samsung's 2017 Home Entertainment Lineup Available In The U.S.

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .