Friday, February 27, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Twitter To Offer More User Safety Features
Google to Start Ranking Mobile-friendly Sites Higher
Qualcomm Extends LTE to Unlicensed Spectrum to Enhance Mobile Experiences
Toshiba Develops Multicore SoC For Image-Recognition Applications
Samsung Says Semiconductor Technology Can Easily Scale Down to 5nm
Ericsson Sues Apple Over Patent Infringement
Net Neutrality Rules Passed by The FCC
Apple To Hold Watch Event on March 9
Active Discussions
burning
nvidia 6200 review
Hello
Burning Multimedia in track 0
I'm lazy. Please help.
sanyo e6 camera
need help on some cd burning...
Why Double Logins ?
 Home > News > General Computing > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, July 02, 2014
Samsung Maintains Its Global NAND Flash Leadership


Samsung Electronics maintained its position as the top-ranked NAND flash memory chipmaker in the world, followed by Toshiba, Micron Technology and SK Hynix.

According to market research firm IHS iSuppli on July 1, Samsung Electronics turned over US$2.84 billion in Q1 2014, and remains the top-ranked NAND flash memory chipmaker in the world with a 37.4 percent share.

Toshiba follows with a 31.9 percent share and US$1.778 billion in sales. It narrowed the gap with Samsung in the market to 5.5 percent.

Micron Technology was in third place with a 20.1 percent share and US$1.121 billion in sales, followed by SK Hynix with a 10.6 percent market share and US$592 million in sales.

Meanwhile, the two Korean firms comprised 65.0 percent of the DRAM market in Q1. Samsung, SK Hynix, and Micron Technology dominate the DRAM market, while the NAND flash market is dominated by the three companies plus Toshiba.

Samsung may also widen the gap with Toshiba after Q2, once manufacturing output in its 3D V-NAND production facility in Xi'an, China is reflected in data.

Toshiba has made an investment of 7 trillion won (US$6.9 billion) in its facility to mass-produce 3D V-NAND flash memory chips.



Previous
Next
IBM Hopes Nanotube Transistors Are Coming Aroud 2020        All News        Japan Universities To Build New Supercomputers
IBM Hopes Nanotube Transistors Are Coming Aroud 2020     General Computing News      Industry Alliances Fight Over The Future Of Connected Home

Get RSS feed Easy Print E-Mail this Message

Related News
NAND Flash Industry To Grow More in 2015
Intel-Micron 3D NAND To Have 32 Layers, 256Gb Per Die
Samsung Starts Mass Production of First 3-bit 3D V-NAND
NAND Flash Market to Grow in 2015
Toshiba, Samsung Vie For 48-layer 3-D NAND Chips
NAND Flash Supplier Revenue Falls in First Quarter: TrendForce
Samsung Starts Mass Producing 32-Layer 3D V-NAND Flash Memory, Its 2nd Generation V-NAND Offering
Toshiba, SanDisk To Challenge Samsung With Mass Production Of '3D' Memory
Samsung Has Started 3D V-NAND Production In Chinese Facility
Samsung Announces High-endurance 128Gb V-NAND Flash Memory For Enerprise SSDs
NAND flash Prices Fell in January
3D-NAND Flash Development To Accelerate Next Year

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .