Monday, September 25, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Russian Firm Unveils 'surveillance-proof' Smartphone
Intel Kills Project Alloy VR Headset
New 4K Apple TV will Only Stream iTunes 4K Content
China-backed Canyon Bridge Buys Imagination for £550 million
iPhone 8 Teardown
Uber Lost License to Operate in London
Globalfoundries Asks EU to Probe TSMC
Facebook to Provide Congress With Ads Linked to Russian Internet Research Agency
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Micron ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, June 05, 2014
Micron to Discuss Emerging Memories at 2014 Symposia on VLSI Technology and Circuits


Micron Technology willparticipate in the upcoming 2014 Symposia on VLSI Technology and Circuits scheduled for June 9-13 and will feature presentations on integration of silicon photonics in bulk CMOS and copper resistive random access memory (ReRAM) for storage class memory applications.

Micron has made research on the development of the first monolithic process flow integrating silicon photonics on operational bulk CMOS. The company says that silicon photonics is a "More-than-Moore's Law" pathway to enable future high-performance memory applications. This effort is part of a larger project on building a complete photonic processor-memory system that includes research teams from Massachusetts Institute of Technology (MIT), University of Colorado Boulder and University of California, Berkeley. The research was funded by the Defense Advanced Research Projects Agency.

The copper ReRAM cell for storage class memory targets hybrid memory systems that incorporate storage class memory as non-volatile cache or DRAM data backup. This is expected to bolster system efficiency and reduce costs since storage class memory promises higher density than DRAM cache and higher speed than the storage control module.

Working in its research partner Sony, Micron has developed a ReRAM cell technology that meets the storage class memory performance specifications for a 16gigabit ReRAM with 200megabyte per second write and 1gigabyte per second read speeds.




Previous
Next
Samsung and Barnes & Noble to Create Co-Branded Tablets        All News        Twitter Eyes Online Music Firm SoundCloud: report
Tizen Developer Conference Introduces New Devices, Device Profiles, Developer Tools and Internet of Things Roadmap     General Computing News      Twitter Eyes Online Music Firm SoundCloud: report

Get RSS feed Easy Print E-Mail this Message

Related News
Micron Brings LPDDR4 and GDDR6 Memory to Autonomous Vehicles
UMC Indicted On Charges of Trade Secret, Following Micron's Suit
Micron Sold the Lexar Brand to Longsys
Micron Expands its NVDIMM-N Portfolio
Micron Advances Semiconductor R&D Capabilities with New Boise Facility
Micron's New Flagship 9200 NVMe Solid-State Storage Family is Blazingly Fast
Micron Posts Record Revenues in fiscal 3Q17
Micron Lexar Removable Storage Retail Business Discontinued
Crucial BX300 SSD Coming This Summer
Micron's GDDR5X Memory Hits the 16Gbps, Mass Production of GDDR6 on Track For Next Year
SK Hynix and Micron Try To Catch up With Samsung in 10nm DRAM Production
Micron Announces a 4-server-node, All-flash, Accelerated Ceph Storage Solution

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .