Monday, November 30, 2015
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
WD, Samsung Lead The HDD And SSD Markets
4K Copy Protection Probably Cracked
AMD To Correct GPU Fan Control Issues With New Crimson Drivers
Google Outlines The Gifts We're Searching For This Holiday
Microsoft Launches New Office 365 Enterprise Capabilities, Dynamics CRM 2016 and Introduces PowerApps
BlackBerry is Exiting Asian Country Following Government Pressure
TDK To Buy Semiconductor Factory From Renesas Electronics
Swatch Parners With Visa On Pay-by-the wrist Payments
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, May 09, 2014
Samsung Has Started 3D V-NAND Production In Chinese Facility

Samsung Electronics has started operating its 3D V-NAND memory fabrication line in Xi'an China in full-scale.

Construction of the new manufacturing facility took 20 months since Samsung broke ground here in September, 2012. The total area of the facility is approximately 230,000 square meters, situated on 1.14 million square meters of land.

Samsung Vice Chairman and CEO Dr. Oh-Hyun Kwon hosted a plant inauguration event, which welcomed a large number of attendees including Chinese government dignitaries.

By commencing operations of its Xi'an fabrication line, Samsung has secured a solid memory production base in China, a market where approximately 50 percent of global NAND flash is generated from production bases operated by many IT companies here.

Samsung's three-dimensional (3D) Vertical NAND (V-NAND) flash memory will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs). It offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

Samsung plans to complete construction of its entire Xi'an complex, which includes an assembly facility and test line, by the end of this year.

Apple To Buy Beats For $3.2 billion        All News        Nvidia Details Financial Results For First Q Fiscal 2015
Chinese Xiaomi To Enter The Tablet Market     PC Parts News      IBM Develops Ultra-fast Phase Change Memory System

Get RSS feed Easy Print E-Mail this Message

Related News
WD, Samsung Lead The HDD And SSD Markets
Samsung Joins Audi’s Progressive SemiConductor Program
Samsung's New DDR4 with TSV Gives a Boost To Data Centers and Servers
Samsung Pay Adds Eight More Credit and Debit Card Issuers
UK High Court Rules Samsung and Huawei Infringe LTE Patent
Samsung Display Is Seeking OLED Growth Through Apple Deal
Samsung To Release Bio Processor Next Year
Samsung Officially Unveils The Exynos 8 Octa Application Processor
Samsung Prepares For Entry In Auto Technology
Samsung Electronics Takes The Lead in Smartphone Sales Worldwide
Samsung To Use Both Exynos 8890, Snapdragon 820 SoCs In Galaxy S7
Samsung Adds Two New Laptops to ATIV Line

Most Popular News
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .