Saturday, May 26, 2018
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Google Takes The Lead Over Amazon in Smart Speaker Market
FBI Says Reboot Your Router to Stop Malware Infecting 500k Devices
ASUS Chromebox 3 Series Coming in July
U.S. to Impose Fine, New Management to ZTE to Keep it in Business
Facebook Keeps Working on In-house Chip Designs
AMD Increased GPU Market Share in Q1
Seagate's New VR Power Drive Adds Capacity and Extends Battery Life of the HTC VIVE Focus VR Headset
Samsung Should Pay Apple $539 million in Patent Retrial
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, May 09, 2014
Samsung Has Started 3D V-NAND Production In Chinese Facility


Samsung Electronics has started operating its 3D V-NAND memory fabrication line in Xi'an China in full-scale.

Construction of the new manufacturing facility took 20 months since Samsung broke ground here in September, 2012. The total area of the facility is approximately 230,000 square meters, situated on 1.14 million square meters of land.

Samsung Vice Chairman and CEO Dr. Oh-Hyun Kwon hosted a plant inauguration event, which welcomed a large number of attendees including Chinese government dignitaries.

By commencing operations of its Xi'an fabrication line, Samsung has secured a solid memory production base in China, a market where approximately 50 percent of global NAND flash is generated from production bases operated by many IT companies here.

Samsung's three-dimensional (3D) Vertical NAND (V-NAND) flash memory will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs). It offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

Samsung plans to complete construction of its entire Xi'an complex, which includes an assembly facility and test line, by the end of this year.




Previous
Next
Apple To Buy Beats For $3.2 billion        All News        Nvidia Details Financial Results For First Q Fiscal 2015
Chinese Xiaomi To Enter The Tablet Market     PC Parts News      IBM Develops Ultra-fast Phase Change Memory System

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Should Pay Apple $539 million in Patent Retrial
Samsung Display Showcases Future Display Technologies SID 2018
Samsung Details Foundry Plans, 3nm Gate-All-Around FETs Coming in 2021
Samsung Opens Global AI Centers in the U.K., Canada and Russia
Samsung Brings Bixby to Home Appliances
Samsung Extends its Semiconductor Sales Lead over Intel
Samsung Galaxy Note 9 Said to Launch Before September
Samsung in Talks with ZTE to Offer Exynos Mobile Processor
Motorola and Microsoft Foldable Phone Patents, and the new Samsung Galaxy S8 Lite
New Samsung Galaxy A6 and A6+ Come With Advanced Cameras and Everyday Features
Chips Power Samsung's Record first-quarter Profit Despite Decline in OLED Sales
Samsung Brings 10nm-class 16Gb LPDDR4X DRAM for Automobiles

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .