Monday, December 18, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Galaxy S9 Series Expected to Offer Just More Power, Capacity
Amazon Faces Probe from France Government: report
Toyota Cars to Go All-electric by 2025
Samsung Galaxy A8, A8 Plus and LG K Series to Appear at CES
North Korea Behind attacks on Cryptocurrency Exchanges: report
BlackBerry Ends Support for Priv, Talks About the Future of BB10
Google to Shut Down Project Tango in March 2018
Facebook Admits Spending Time on Social Media is Bad for You
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, May 09, 2014
Samsung Has Started 3D V-NAND Production In Chinese Facility


Samsung Electronics has started operating its 3D V-NAND memory fabrication line in Xi'an China in full-scale.

Construction of the new manufacturing facility took 20 months since Samsung broke ground here in September, 2012. The total area of the facility is approximately 230,000 square meters, situated on 1.14 million square meters of land.

Samsung Vice Chairman and CEO Dr. Oh-Hyun Kwon hosted a plant inauguration event, which welcomed a large number of attendees including Chinese government dignitaries.

By commencing operations of its Xi'an fabrication line, Samsung has secured a solid memory production base in China, a market where approximately 50 percent of global NAND flash is generated from production bases operated by many IT companies here.

Samsung's three-dimensional (3D) Vertical NAND (V-NAND) flash memory will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs). It offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

Samsung plans to complete construction of its entire Xi'an complex, which includes an assembly facility and test line, by the end of this year.




Previous
Next
Apple To Buy Beats For $3.2 billion        All News        Nvidia Details Financial Results For First Q Fiscal 2015
Chinese Xiaomi To Enter The Tablet Market     PC Parts News      IBM Develops Ultra-fast Phase Change Memory System

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Galaxy A8, A8 Plus and LG K Series to Appear at CES
New Samsung Notebook 9 Pen and Notebook 9 Released
Samsung Patents 'Double-sided' Smartphone
Upcoming Samsung QLED TVs Could Have LG Panels Inside
Luxurious Samsung W2018 Flip Phone Launches in China
Samsung Starts Producing 512-Gigabyte Universal Flash Storage for Mobile Devices
KDDI and Samsung Demonstrate 5G on a Train Moving at 100kmh
Wearables Market Grows as Smart Wearables Rise and Basic Wearables Decline
Samsung to Add Bixby to New ARTIK IoT Solution
Samsung Starts Mass Production of its 2nd Generation 10nm FinFET Process Technology
Samsung's 'Graphene Ball' Technology Speeds up Battery Charging
Samsung Foundry in Advanced Discussions With New Customers for 7nm Chips

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .