Wednesday, February 10, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Oculus Starts Offering Discounted Computers To Early Virtual Reality Adopters
Archos 50d Oxygen Launching At MWC
Chip Makers Differientate In terms Of Equipment Investments
New Plextor M6S Plus SSDs Released
AMD's FreeSync Technology Coming In Latest HP Laptops
Twitter Introduces A New Home Timeline Feature
ARM Says New Mobile Chips Gain Share, Eyes Car Computing For Future Growth
AMD and Saguna Collaborate to Design Low-Power Mobile Edge Computing (MEC) Solutions for Mobile Networks
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, May 09, 2014
Samsung Has Started 3D V-NAND Production In Chinese Facility


Samsung Electronics has started operating its 3D V-NAND memory fabrication line in Xi'an China in full-scale.

Construction of the new manufacturing facility took 20 months since Samsung broke ground here in September, 2012. The total area of the facility is approximately 230,000 square meters, situated on 1.14 million square meters of land.

Samsung Vice Chairman and CEO Dr. Oh-Hyun Kwon hosted a plant inauguration event, which welcomed a large number of attendees including Chinese government dignitaries.

By commencing operations of its Xi'an fabrication line, Samsung has secured a solid memory production base in China, a market where approximately 50 percent of global NAND flash is generated from production bases operated by many IT companies here.

Samsung's three-dimensional (3D) Vertical NAND (V-NAND) flash memory will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs). It offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

Samsung plans to complete construction of its entire Xi'an complex, which includes an assembly facility and test line, by the end of this year.




Previous
Next
Apple To Buy Beats For $3.2 billion        All News        Nvidia Details Financial Results For First Q Fiscal 2015
Chinese Xiaomi To Enter The Tablet Market     PC Parts News      IBM Develops Ultra-fast Phase Change Memory System

Get RSS feed Easy Print E-Mail this Message

Related News
Chip Makers Differientate In terms Of Equipment Investments
Samsung Loses Memory-Chip patent Trial Against Nvidia
768 Gbit Micron 3D NAND Is Faster Than Samsung’s 256Gb V-NAND: ISSCC
Samsung Describes Its 10nm SRAM
Samsung Galaxy S7 and S7 Edge Coming At February's Unpacked 2016 Event
LG's Home Appliances Business More Profitable Than Samsung's
Samsung Reports Drop In Profit For Q4
Samsung Said To Unveil Phone Upgrade Program
Samsung SDI to Invest In Automotive Battery Business
Samsung Gear S2 Classic New Edition Launches Globally
Court Bans Sales Of Some Samsung Phones in The U.S
Samsung Begins Mass Producing 4-Gigabyte HBM2 DRAM

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .