Saturday, April 25, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
LG Display Leads The OLED Market
China Telecom To Sell Phones With Alibaba
SK Hynix To Start Production Of 36-Layer 3D NAND Flash Chips
Apple Watch Available In Select Stores
Comcast Abandons Time Warner Cable Acquisition Bid
Luxottica To Release Hi-tech Glasses Powered By Intel
Toshiba Starts Mass Production of 13 Megapixel CMOS Image Sensor
ARM Details New Cortex-A72 Processor
Active Discussions
menu making
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Question about nero
Copied dvd's say blank in computer only
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, March 27, 2014
Samsung To Start 3D V-NAND Production In New China-based Factory


Samsung Electronics will start operations in a new semiconductor factory in Xian, China, in May.

The factory is Samsung's first semiconductor manufacturing line based in China, and the company's second overseas factory after the one in Austin, Texas, U.S.

The tech giant pans to invest US$7 billion over five years, including the initial investment amount of US$2.3 billion in the factory, making it the biggest investment for the company into China in its history.

The factory will manufacture 3D V-NAND technology, with the initial production to be 70,000 sheets a month, using 300mm wafers.

Samsung's three-dimensional (3D) Vertical NAND (V-NAND) flash memory will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs). It offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

Samsung is also constructing a NAND flash post-step line that is to be completed at the end of the year. It is located close to its Xian factory, and the line?s initial investment is about US$500 million.




Previous
Next
PC, Tablet, Ultramobile and Mobile Phone Shipments to Grow 6.9 Percent This Year        All News        Samsung May Penalize SK Telecom For Early Galaxy S5 Sales
Government Requests For User Information Up 120 Percent Over Four Years: Google     General Computing News      AOL Unveils The ONE Ad Platform

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Leads The Global SSD Market
Samsung Galaxy Tab A Coming In The U.S.
Samsung Logo Removed From Japanese Smartphones
The Latest On Nvidia's Patent Dispute with Samsung
Samsung Display Buys Quantum Dot Technology From SEC
Samsung Galaxy S6 Edge Pricier to Build, Cheaper to Buy Than The Apple iPhone 6 Plus
Samsung Now Producing First M.2 NVMe PCIe SSD for PCs
Samsung to Make 14nm GPUs For Nvidia
Samsung to Release Proprietary Mobile Application Processor Core
Samsung Expects High Profit Ahead of S6 Launch
NVIDIA Receives Favorable Ruling from ITC in Patent Dispute with Samsung, Qualcomm
Samsung Responds To Press Reports

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .