Wednesday, March 04, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Google Says Android Lollipop Does Not Encrypt Data Due To Performance Issues
Apple To Release Fix For Freak Security Bug
Mozilla Brings Native Games to the Web
AMD Enters The Virtual Reality market With Liquid VR
SanDisk Creates New Storage Category With InfiniFlash All-Flash Storage System
HyperX Releases FURY And High-capacity Predator DDR4 Kits
ARM Announces Enlighten 3 Engine
Samsung Lost Top Position to Apple in Q4's Global Smartphone Market
Active Discussions
Need serious help!!!!
burning
nvidia 6200 review
Hello
Burning Multimedia in track 0
I'm lazy. Please help.
sanyo e6 camera
need help on some cd burning...
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, March 11, 2014
Samsung Now Mass Producing 4Gb DDR3 Using 20 Nanometer Process Technology


Samsung Electronics has started mass production of 4-gigabit (Gb) DDR3 memory using a new 20 nanometer process technology, which saves up to 25 percent of the energy consumed by equivalent modules fabricated using the previous 25 nanometer technology.

Samsung has pushed the envelope of DRAM scaling, while utilizing currently available immersion ArF lithography, in its roll-out of the industry's most advanced 20-nanometer (nm) 4-gigabit (Gb) DDR3 DRAM.

With DRAM memory, where each cell consists of a capacitor and a transistor linked to one another, scaling is more difficult than with NAND Flash memory in which a cell only needs a transistor. To continue scaling for more advanced DRAM, Samsung refined its design and manufacturing technologies and came up with a modified double patterning and atomic layer deposition.



Samsung says its modified double patterning technology is enabling 20nm DDR3 production using current immersion ArF lithography equipment and establishes the core technology for the next generation of 10nm-class DRAM production. Samsung also created ultrathin dielectric layers of cell capacitors with "an unprecedented" uniformity, which has resulted in higher cell performance.

With the new 20nm DDR3 DRAM applying these technologies, Samsung also has improved manufacturing productivity, which is over 30 percent higher than that of the preceding 25 nanometer DDR3, and more than twice that of 30nm-class DDR3.

In addition, the new 20nm 4Gb DDR3- based modules can save up to 25 percent of the energy consumed by equivalent modules fabricated using the previous 25 nanometer process technology.




Previous
Next
Titanfall Now Available on Xbox One        All News        Samsung, Vizio Control U.S. Smart TV Market
Intel Accelerates Data Centers With New MXC Optical Cable Technology     PC Parts News      ZOTAC Announces New ZBOX E-Series and ZBOX nano Mini PCs at CeBIT 2014

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Lost Top Position to Apple in Q4's Global Smartphone Market
Samsung Releases New Image Sensor and NFC IC For Mobile Devices
Crafted from Metal and Glass, Samsung Galaxy S6 and Galaxy S6 Edge Are Here
Samsung Says Semiconductor Technology Can Easily Scale Down to 5nm
Samsung To Showcase IoT, Network Functions Virtualization and 5G Technologies at MWC 2015
Samsung Introduces First 128-Gigabyte Universal Flash Storage for Smartphones
Group Files FTC Complaint Against Samsung’s Smart TVs
Samsung, SK Telecom to Collaborate Demonstrate 5G at MWC
This Is The New Samsung Galaxy S6
Samsung to Supply Memory Chips To LG, Apple
Samsung SDI Buys Magna 's Battery Pack
Samsung Releases Public Safety LTE Solution

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .