Tuesday, September 01, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Alliance for Open Media To Deliver Open Standard for Online Ultra High Definition Video
Seagate Develops High Density Mobile Hard Drive Technology, New Portfolio of 8TB Hard Drives
Apple To Work With Cisco On Enterprise Environment; said To Prepare Own Original Programming
Qualcomm Snapdragon 820 Processor To Geature Mobile Anti-malware Technology
WD My Cloud OS 3 Makes Cloud Storage More Personal
Samsung's Circular Gear S2 Smartwatches Unveiled
Android Wear Comes To iPhones
NVIDIA GRID 2.0 Launches
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, February 18, 2014
Samsung Announces High-endurance 128Gb V-NAND Flash Memory For Enerprise SSDs


Samsung Electronics announced the development of a "Vertical NAND (V-NAND)" 3D NAND flash memory that endures 35,000 write/erase cycles as an enterprise SSD.

Speaking earlier this month at the International Solid-State Circuits Conference (ISSCC) 2014, Samsung's researchers described the new V-NAND memory, which is an MLC (multi-level cell) product using 24 memory cell layers and has a capacity of 128 Gbits per chip. The chip are is 133mm2 and its bit density is 0.96 Gbits/mm2, which Samsung claims is the highest in the industry.



However, the manufacturing cost of the V-NAND remains higher than the latest planar NAND, requiring new capital investments. Samsung says that the next generations of V-NAND will feature with more memory cell layers, making its cost comparable to planar NAND in cost. The company plans to release 1-Tbit V-NAND sometime in 2017.

The company targets the latest technology at high-performance applications such as enterprise SSDs. Whan applied to an enterprise SSD, the new V-NAND realizes a write/erase endurance of 35,000 cycles with a write throughput of 36 Mbytes per second, according to Samsung. For embedded applications, it will realize a write/erase endurance of 3,000 cycles with a write throughput of 50 Mbytes per second.

At ISSCC 2014, Micron Technology also announced a 16nm 128Gbit NAND flash memory based on the planar NAND technology. This chip was larger (173.3mm2) that Samsung's V-NAND memory.

The battle between 2D NAND and 3D NAND has just begun. The current manufacturing cost of the V-NAND is higher than that of the latest planar NAND. On the other hand, it is not clear how further the miniaturization of planar NAND can go, as microfabrication lead to an increased in bit-error ratio and strong error correction technologies would be required.




Previous
Next
Sony PS4 Sales Surpass 5.3 Million Units        All News        Researchers Develop Electrode That Can Be Used In Stretchable Electronic Devices
Intel Releases Xeon Processor E7 v2 Family For Big Data Analytics     PC Parts News      Spansion Debuts Breakthrough Interface and World's Fastest NOR Flash Memory

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung's Circular Gear S2 Smartwatches Unveiled
Samsung Used TSMC's Technology To Prevail In Chip Manufacturing Race
Samsung To Accelerate Chip Production
Samsung Announces New Wireless Audio 360 Speakers
Samsung Says Users Should Follow The Manual With Galaxy Note 5 Stylus
Samsung To Give iPhone Users The new Galaxy Smartphones
New Galaxy Note 5 Phablet Has The Best Display: report
Samsung Offers USB Flash Drive Family
Samsung Introduces Level On Wireless Pro Headphones
New Samsung Galaxy Note 5 and S6 Edge Plus Phablets Unveiled
Samsung Rolls Out Line-up of V-NAND SSDs For Data Centers
Samsung Begins Mass Producing 256-Gigabit, 3D V-NAND Flash Memory

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .