Saturday, August 29, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Alienware Brings Liquid Cooling and Dynamic Overclocking to Holiday Lineup
Razer Launches Wildcat Xbox One Controller And Upgraded Nabu Smartband
Workstation Market Shippments Rebound In Q2
Google Will Help You Find Your Plumber
IFA 2015: What We Know So Far
Acer Liquid Z410 And Liquid Jade Z Phones Released
Huawei Honor Phones Coming To Europe
AMD Radeon R9 370X Graphics Card Launched In Asia
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > PC Parts > TSMC In...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, December 13, 2013
TSMC Introduces Its 16nm FinFET Technology


Taiwan Semiconductor Manufacturing Co Ltd talked about its 16nm new process technology at the International Electron Devices Meeting (IEDM) 2013, which took place from Dec 9 to 11, 2013, in Washington, D.C..

Designed for systems on a chip for mobile and computing devices, the 16nm technology will be used by TSMC by the end of 2013.

It is the firt time that TSMC employs a three-dimensional transistor (FinFET) for its 16nm process. The company said that the technology enables an 100% increasment in the density of transistors, comapred to its 28nm process technology (high-k gate dielectric film/metal gate). More transistors per square unit allowed for a 35% faster operation speed as well as a 55% lower consumption.

TSMC provided some technical details of its 16nm technology.

The company "shared" some technology from its current 20nm and the 28mn processes, such as BEOL (back end of line) metal interconnection technology and the gate-last (replacement gate) method that had been used for the 28nm process technology. But this time, the BEOL metal interconnection technology uses FinFETs in place of planar transistors.

16nm
Technology features
Process
FinFET, HKMG, Dual-Oxide, Cu/LK
Digital
Core & I/O, multi-Vt
Analog
High-R, Varator, BJT, FMOM
Memory
6T (HD,HC, HP), 2P-8T, DP SRAM, ROM
Chip ID/ repair
Electrical fuse
LC-Tank
Inductor, RF-Varactor, RF-MOM
De-Cap
HD-MiM, MOSCAP
ESD
Gated-diode, STI-diode, Snapback MOS




TSMC also employed seven-layer Cu-low-k interconnection. Double-patterning and pitch-splitting techniques are used for the patterning of the first metal interconnection and the formation of fins, respectively.

TSMC has already applied the 16nm process technology in the deleopment of a 128-Mbit SRAM prototype. The company said that the chip can be produced with a high yield rate.




Previous
Next
ECMA Introduces Standard For Parallel Read/write On Multiple-disc Optical Storage Systems        All News        Google Said to Design Chips
PCIe SSD and TLC SSD to Gain Spotlight in 2014 PC SSD Market     PC Parts News      Showa Denko To Produce Next Generation SMR and HAMR Hard Disk Media In 2015

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Used TSMC's Technology To Prevail In Chip Manufacturing Race
TSMC to Cease Solar Manufacturing Operations
TSMC Starts Mass Production Of 16nm Chips
TSMC To Move To 10nm Production in 2016
TSMC Solar Commercial-size Modules Achieve Record Efficiency
TSMC Start 10nm Manufacturing in mid-2016
TSMC Reports 65 pct Rise in Q1 Profit
TSMC Achieves EUV Productivity Milestone
TSMC Selling Sold ASML Stake
TSMC Sells LED Unit to Epistar
TSMC Chairman Sees Technical Hurdles In keeping Up With Moore's Law
TSMC To Make Intel's SoFIA Handset Chips

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .