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Wednesday, October 30, 2013
SK Hynix Developed 6Gb LPDDR3


SK hynix, the world's second-biggest memory chipmaker, said Wednesday it has developed an advanced chip that boasts 6-gigabit capacity with Low Power DDR3.

The 6Gb LPDDR3 (Low Power DDR3) was made using the company's 20nm class process technology. This product is a high-performance mobile memory solution that features low power consumption and high-density, designed for generation premium mobile devices.

Four 6Gb LPDDR3 products can be stacked up and realize a high density of maximum 3GB (Gigabytes, 24Gb) solution in a single package. In consequence, this package reduces the operating power as well as the standby current by 30% and the height of the package becomes thin compared to the company's 4Gb-based one. In addition, it works at ultra low-voltage of 1.2V thus it satisfies low power consumption which mobile applications demand.

The product works at 1866Mbps, and with a 32-bit I/O it processes up to 7.4GB of data per second in a single channel, and 14.8GB in a dual channel. It can be provided in a form of 'PoP' (Package on Package) to mobile devices.

3GB LPDDR3 products are expected to be noticeably loaded mainly on to high-end mobile devices from the first half of next year and will be loaded constantly until 2015.

The company plans to start the mass production of the new memory at the beginning of next year.

SK hynix defeated market leader Samsung Electronics during the third quarter of this year in terms of profit margin as SK hynix hugely benefited from stronger chip prices after a fire in its plant in Wuxi, China.




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