Saturday, December 20, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
T-Mobile to Pay $90 Million To Settle Case With FCC
New Trojan Targetted Banks Wordlwide
FBI Confirms North Korea Was Behind Sony Hack
Apple Responds To BBC's Allegations Over Working Conditions In Chinese Factory
BlackBerry Returns To Cash Flow
Comparison: Quantum Dot Vs. OLED Displays
Toshiba and SK Hynix Reach Settlement in Lawsuit Ahead Of CES
Google Concerned About MPAA's Actions To Revive SOPA
Active Discussions
Digital Audio Extraction and Plextools
Will there be any trade in scheme for the coming PSP Go?
Hello, Glad to be Aboard!!!
Best optical drive for ripping CD's? My LG 4163B is mediocre.
Hi All!
cdrw trouble
CDR for car Sat Nav
DVD/DL for Optiarc 7191S at 8X
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, August 06, 2013
Samsung Starts Mass Producing First 3D Vertical NAND Flash


Samsung has begun mass producing the first three-dimensional (3D) Vertical NAND (V-NAND) flash memory, which breaks through the current scaling limit for existing NAND flash technology.

Achieving gains in performance and area ratio, the new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs).

Samsung's new V-NAND offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

"The new 3D V-NAND flash technology is the result of our employees' years of efforts to push beyond conventional ways of thinking and pursue much more innovative approaches in overcoming limitations in the design of memory semiconductor technology," said Jeong-Hyuk Choi, senior vice president, flash product & technology, Samsung Electronics. "Following the world?s first mass production of 3D Vertical NAND, we will continue to introduce 3D V-NAND products with improved performance and higher density, which will contribute to further growth of the global memory industry."

Samsung's new V-NAND solves such technical challenges by achieving new levels of innovation in circuits, structure and the manufacturing process through which a vertical stacking of planar cell layers for a new 3D structure has been successfully developed. To do this, Samsung revamped its CTF architecture, which was first developed in 2006. In Samsung's CTF-based NAND flash architecture, an electric charge is temporarily placed in a holding chamber of the non-conductive layer of flash that is composed of silicon nitride (SiN), instead of using a floating gate to prevent interference between neighboring cells.

By making this CTF layer three-dimensional, the reliability and speed of the NAND memory have improved sharply. The new 3D V-NAND shows not only an increase of a minimum of 2X to a maximum 10X higher reliability, but also twice the write performance over conventional 10nm-class floating gate NAND flash memory.

Also, one of the most important technological achievements of the new Samsung V-NAND is that the company's proprietary vertical interconnect process technology can stack as many as 24 cell layers vertically, using special etching technology that connects the layers electronically by punching holes from the highest layer to the bottom. With the new vertical structure, Samsung can enable higher density NAND flash memory products by increasing the 3D cell layers without having to continue planar scaling, which has become incredibly difficult to achieve.

According to IHS iSuppli, the global NAND flash memory market is expected to reach approximately US $30.8 billion in revenues by the end of 2016, from approximately US $23.6 billion in 2013 with a CAGR of 11 percent, in leading growth of the entire memory industry.


Previous
Next
Samsung Appeals U.S. ITC Ruling        All News        Toshiba, SanDisk to build New Flash Memory Plant: report
Fujitsu To Make New Supercomputer System For Canon     PC Parts News      Crossbar Unveils PRAM Non-Volatile Memory Technology

Get RSS feed Easy Print E-Mail this Message

Related News
LG, Samsung, To Dominate The TV Market in 2015
Samsung Started Production of Apple A9 SoC in 14nm FinFET
Samsung Announces Annual Reorganization for 2015
Samsung Releases New 3-bit V-NAND 850 EVO SSD
Possible Samsung Galaxy S6 Specs Leak
Samsung Seeks to Toss $930 Million Award
NAND Flash Industry To Grow More in 2015
Samsung To Sell Fiberoptics Business to Corning
Samsung to Test Tizen Phone in India
Far Cry 4 Game Available For Free With Purchase of 840 EVO SSD
Samsung's DeepSort Sorting Engine Prevails In Benchmarks
Samsung Introduces EYECAN+ Mouse for People with Disabilities

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .