Sunday, August 02, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Microsoft Sees Growth Beyond The Desktop With Windows 10
Yahoo Gets Fashionable With Acquisition Of Polyvore
NVIDIA Recalls SHIELD Tablets Due To Battery Issues
Firefox Attacks Microsoft Over Default Browser in Windows 10
Sharp to Exit Americas TV Market
Researchers Showcase Javascript-based Attack On a Computer's DRAM
Hackers Used Twitter hashtags To Extract Data From Compromised Networks
Facebook Unveils New Security Checkup Tool
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, August 06, 2013
Samsung Starts Mass Producing First 3D Vertical NAND Flash


Samsung has begun mass producing the first three-dimensional (3D) Vertical NAND (V-NAND) flash memory, which breaks through the current scaling limit for existing NAND flash technology.

Achieving gains in performance and area ratio, the new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs).

Samsung's new V-NAND offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

"The new 3D V-NAND flash technology is the result of our employees' years of efforts to push beyond conventional ways of thinking and pursue much more innovative approaches in overcoming limitations in the design of memory semiconductor technology," said Jeong-Hyuk Choi, senior vice president, flash product & technology, Samsung Electronics. "Following the world?s first mass production of 3D Vertical NAND, we will continue to introduce 3D V-NAND products with improved performance and higher density, which will contribute to further growth of the global memory industry."

Samsung's new V-NAND solves such technical challenges by achieving new levels of innovation in circuits, structure and the manufacturing process through which a vertical stacking of planar cell layers for a new 3D structure has been successfully developed. To do this, Samsung revamped its CTF architecture, which was first developed in 2006. In Samsung's CTF-based NAND flash architecture, an electric charge is temporarily placed in a holding chamber of the non-conductive layer of flash that is composed of silicon nitride (SiN), instead of using a floating gate to prevent interference between neighboring cells.

By making this CTF layer three-dimensional, the reliability and speed of the NAND memory have improved sharply. The new 3D V-NAND shows not only an increase of a minimum of 2X to a maximum 10X higher reliability, but also twice the write performance over conventional 10nm-class floating gate NAND flash memory.

Also, one of the most important technological achievements of the new Samsung V-NAND is that the company's proprietary vertical interconnect process technology can stack as many as 24 cell layers vertically, using special etching technology that connects the layers electronically by punching holes from the highest layer to the bottom. With the new vertical structure, Samsung can enable higher density NAND flash memory products by increasing the 3D cell layers without having to continue planar scaling, which has become incredibly difficult to achieve.

According to IHS iSuppli, the global NAND flash memory market is expected to reach approximately US $30.8 billion in revenues by the end of 2016, from approximately US $23.6 billion in 2013 with a CAGR of 11 percent, in leading growth of the entire memory industry.


Previous
Next
Samsung Appeals U.S. ITC Ruling        All News        Toshiba, SanDisk to build New Flash Memory Plant: report
Fujitsu To Make New Supercomputer System For Canon     PC Parts News      Crossbar Unveils PRAM Non-Volatile Memory Technology

Get RSS feed Easy Print E-Mail this Message

Related News
Galaxy S6 Sales Not Enough To Keep Samsung's Profit High
Samsung Starts Mass Production Of First Mobile Image Sensor with 1.0µm Pixels
Samsung To Showcase New Galaxy Phablet on August 13 Event
Smartphone Market Posts Year-Over-Year Growth in Q2 2015
Samsung Unveils New Data Center Solid State Drives
New Galaxy J2 Coming In S. Korea
Samsung Galaxy Tab S2 Tablet Coming Next Month
Samsung Launches The Ultra-slim Galaxy A8 in China
Samsung To Develop 11K Super-Resolution Display
Next Generation Samsung Galaxy Note To Come In August
Samsung Galaxy Grand Prime Arrives At Sprint
Samsung Announces Earnings Guidance

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .