Toshiba ans Sandisk will expand their No. 5 semiconductor joint venture wafer fabrication facility (Fab 5) at Yokkaichi Operations in Mie, Japan, to secure manufacturing space for NAND flash memories fabricated with next generation process technology and for future 3D memories.
Fab 5 second phase construction will start at the end of August this year and be completed in summer next year.
The companies expect to use phase two of Fab 5 primarily for technology transitions of existing Yokkaichi wafer capacity. The new cleanroom will provide the space needed for additional equipment required for transitioning the wafer capacity in Fab 3, Fab 4 and phase one of Fab 5, to next generation 2D NAND technologies and to early generations of 3D NAND technology.
Fab 5 will have an earthquake absorbing structure and is designed to minimize environmental impact. Extensive use of LED lighting throughout the facility and up-to-date energy-saving production facilities, along with full and effective use of waste heat, are expected to reduce CO2 emissions to a level 13 percent lower than for Fab 4.
Fab 5 phase 2 will have an automated product transportation system and quake-absorbing structure and will be designed to minimize environmental loads. Deployment of LED lighting and up-to-date energy-saving production facilities, along with full and effective use of waste heat, are expected to cut CO2 emissions by 13% compared with Fab 4.