Wednesday, June 29, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Western Digital My Passport Line Now In Capacities of Up To 4TB
IBM Scientists Discover New Recycling Process to Convert Old Smartphones and CDs into Non-Toxic Plastics
Amazon Page Flip Offers A New Way to Hop, Skim, and Jump through Kindle Books
NTT Uses Light Reflection To Create Faster Encryption Technique
New LG Projector Creates An 80-inch screen in Short Distance
Researchers Unveil New Data Replication Method for Disaster-resilient Information Platforms
Dell 78-inch Monitor, Full HD projectors And The Dell Classroom Software for Chromebooks
Nvidia To Position The GTX 1060 Against New Radeon RX 480
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > GLOBALF...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, April 02, 2013
GLOBALFOUNDRIES Demonstrates 3D TSV Capabilities on 20nm Technology


At its Fab 8 campus in Saratoga County, N.Y., GLOBALFOUNDRIES today demonstrated its first functional 20nm silicon wafers with integrated Through-Silicon Vias (TSVs).

Manufactured using GLOBALFOUNDRIES' 20nm-LPM process technology, the TSV capabilities will allow the foundry's customers to stack multiple chips on top of each other, providing another avenue for delivering the performance, power, and bandwidth requirements of today's electronic devices.

TSVs are vertical vias etched in a silicon wafer that are filled with a conducting material, enabling communication between vertically stacked integrated circuits. The adoption of three-dimensional (3D) chip stacking is increasingly being viewed as an alternative to traditional technology node scaling at the transistor level. However, TSVs present a number of new challenges to semiconductor manufacturers.

GLOBALFOUNDRIES utilizes a "via-middle" approach to TSV integration, inserting the TSVs into the silicon after the wafers have completed the Front End of the Line (FEOL) flow and prior to starting the Back End of the Line (BEOL) process. This approach avoids the high temperatures of the FEOL manufacturing process, allowing the use of copper as the TSV fill material. To overcome the challenges associated with the migration of TSV technology from 28nm to 20nm, GLOBALFOUNDRIES engineers have developed a proprietary contact protection scheme. This scheme enabled the company to integrate the TSVs with minimal disruption to the 20nm-LPM platform technology, demonstrating SRAM functionality with critical device characteristics in line with those of standard 20nm-LPM silicon.


Previous
Next
Hybrid Memory Cube To Boost DRAM Bandwidth        All News        New Drivers To Boost Intel HD4000 Graphics
Hybrid Memory Cube To Boost DRAM Bandwidth     PC Parts News      New Drivers To Boost Intel HD4000 Graphics

Get RSS feed Easy Print E-Mail this Message

Related News
GLOBALFOUNDRIES Releases 130nm SiGe RF Technology For Wireless Network Communications
SUNY Poly and GLOBALFOUNDRIES Announce $500M Research ProgramTo Accelerate Chip Technology
GLOBALFOUNDRIES Launches High-Performance ASIC Offering on 14nm FinFET Process
GlobalFoundries And AMD Achieve 14nm FinFET Technology Success
Globalfoundries Said To Move To 10nm Development On Its Own
GLOBALFOUNDRIES Launches 22nm FD-SOI Technology Platform
GLOBALFOUNDRIES Provides Design Flows For 14nm FinFET Chips
GLOBALFOUNDRIES Releases New Low-Power 28nm Solution for Mobile and IoT Applications
GLOBALFOUNDRIES Joins imec to Develop RF Solutions for Internet of Things Applications
Globalfoundries Invests In MRAM Maker Everspin
Glonbalfoundries Buy IBM's Micorelectronics Business
IBM Talks With Globalfoundries Stall Over Price: report

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .