Saturday, December 03, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple Sent Letter NHTSA Asking About Autonomous Vehicle Guidelines
Apple Blames Battery For Random iPhone 6s Shutdowns
Microsoft Stores Reveal Xbox Discounts And Offers
Researcher Bypasses The iOS Activation Lock
Facebook To Offer $20 million To Improve Silicon Valley Communities
Xiaomi Launches Voice -controller Mi Wi-Fi Speaker
Xiaomi "Denies" Mi MIX Nano Existence
Nokia D1C Specs Leak
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Mobiles > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, February 08, 2013
Toshiba Is Sampling First UFS-compliant Embedded NAND Flash Memory Modules


Toshiba has started sample shipments of a 64GB embedded NAND flash memory module, the first equipped with a UFS I/F.

The module is fully compliant with the JEDEC UFS Ver.1.1 standard and is designed for digital consumer products including smartphones and tablet PCs.

The 64GB NAND flash memory chip boasts with ultra-speedy 3.0Gb/s interface. The module is sealed in a small FBGA package, 12x16x1.2mm, and have a signal layout compliant with JEDEC UFS Ver.1.1.

Universal Flash Storage is a product category for a class of embedded memory products built to the JEDEC UFS standard specification. The JEDEC UFS Ver.1.1 compliant interface handles essential functions, including writing block management, error correction and driver software.

Toshiba is offering the samples to OC vendors in order to evaluate the UFS I/F and its protocol in host chipsets. UFS I/F has a serial I/F, offreing scalability in the number of lanes and speed.

Toshiba has not yet decided when it will start mass production of the new 64GB UFS module.

Specifications

Interface: JEDEC UFS Version 1.1 standard

Power Supply Voltage:
2.7V to 3.6V (Memory core)
1.70V to 1.95V (Controller core)
1.10V to 1.30V (UFS I/F signals)

Number of lanes: Downstream 1 lane / Upstream 1 lane
I/F Speed: 2.9Gbps/lane
Temperature range: -25 degrees to +85 degrees Celsius
Package: 169Ball 12x16x1.2mm FBGA


Previous
Next
Twitter Now Showing Older Tweets In Search Results        All News        Seagate Set To Release Four-platter 4TB HDD
Spotify Comes To Windows Phone 8     Mobiles News      Blackberry 10 Won't Reach Japan

Get RSS feed Easy Print E-Mail this Message

Related News
A Closer Look At SK Hynix's 3D NAND
SK hynix To Start Mass Production Of 48-layer 3D-NAND Chips
Toshiba Expands 3D Flash Memory Production Capacity In New Fabrication Facility at Yokkaichi
Toshiba Advances Deep Learning with Extremely Low Power Neuromorphic Processor
Toshiba's Voice Recognition Technology Can Distinguish Multiple Individual Speakers Without Training
Toshiba Launches New e•MMC and UFS Memories with Updated Controllers
Investors Sue Toshiba Over Accounting Scandal
Toshiba Starts Testing System For Future Self-driving Cars
NAND Flash Prices on Upswing in Fourth Quarter Due To Supply Shortage
Samsung to Start Making 64-layer 3-D Flash memory for Smartphones
Toshiba, Tohoku Electric and Iwatani Start Study of World?s Largest Hydrogen Energy System
Toshiba Introduces the Value-oriented OCZ TL100 SATA SSD Series

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .