Sunday, January 22, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple Sues Qualcomm Over Patent Royalties
Sharp Establishes New Research and Development Center for Home Appliances in China
Samsung Seeks Arbitration Over LCD Supply Halt
Canon May Invest In Toshiba's Chip Business
Samsung To Explain What Caused The Galaxy Note 7's ban In Press Event
Nintendo's 'Fire Emblem Heroes' Smartphone Game features in-app Purchases
Fujifilm X-T20 Features New 24MP Sensor and 4K Video Capture
Samsung Begins Rollout of Android 7.0 Nougat
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, February 01, 2013
Toshiba Showcased 128Gb 19nm NAND Flash At Nano Tech


Toshiba showcased a 300mm wafer that had 128-Gbit NAND flash memory chips and was made by using 19nm process technology at "nano tech 2013 ? The 12th International Nanotechnology Exhibition & Conference", the world's biggest exhibition of nanotechnology, that was held at the Tokyo Big Sight from January 30 to February 1.

The company employed the 19nm process technology as well as a 3bit/cell multiple-level cell (MLC) technology. Compared to 2bit/cell MLC flash, the 3bit/cell MLC flash chips can be rewritten fewer times, meaning that the new flash is mostly suited for USB flash drives or flash cards, where absolute costs and density are the most important thing, and the performance and endurance are still adequate.

Toshiba claims that its 19nm process technology offers the same reliability as its previous 24nm process. The Japanese company used a structure that separates floating gates with air gaps to reduce the interference between memory cells.

Toshiba has been also working on the reduction of package thickness by stacking NAND chips in several layers. The company has managed to maintain a slim package for its 128-Gbyte memory by staking 16 layers of 30µm-thick 64-Gbit chips using a wire bonding technology.


Previous
Next
Google Works With EU To Settle Antitrust Probe        All News        OCZ Technology Provides Estimated Financial Information
New 180GB Capacity Added to Intel SSD 335 Series     PC Parts News      OCZ Technology Provides Estimated Financial Information

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba May Spin Off Its Semiconductor Business
CES 2017: Toshiba Debuts Portege X20W 2-in-1 Convertible
SK Hynix Inc. to Invest $2.7 billion In Cutting Edge NAND Flash Fabs
NAND Flash Prices to Keep Rising Next Year
Toshiba Expands Line-up of Embedded NAND Flash Memory Products for Automotive Applications
A Closer Look At SK Hynix's 3D NAND
SK hynix To Start Mass Production Of 48-layer 3D-NAND Chips
Toshiba Expands 3D Flash Memory Production Capacity In New Fabrication Facility at Yokkaichi
Toshiba Advances Deep Learning with Extremely Low Power Neuromorphic Processor
Toshiba's Voice Recognition Technology Can Distinguish Multiple Individual Speakers Without Training
Investors Sue Toshiba Over Accounting Scandal
Toshiba Starts Testing System For Future Self-driving Cars

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .