CDRInfo Forum CDRInfo Forum

Forums  Register  Login  My Profile  Inbox  Address Book  My Subscription  My Forums 

Photo Gallery  Member List  Search  Calendars  FAQ  Ticket List  Log Out

Fujitsu Develops High-Speed ReRAM   Logged in as: Guest
Viewers: 1153 You can click here to see Today's Posts | Most Active Topics | Posts Since Last Visit
  Printable Version
All Forums >> [News Around The Web] >> Science and Tech >> Fujitsu Develops High-Speed ReRAM Page: [1]
Login
Message << Older Topic   Newer Topic >>
Fujitsu Develops High-Speed ReRAM - 12/14/2007 3:52:04 PM   
icube001


Posts: 5429
Joined: 11/6/2006
Status: offline
Fujitsu Laboratories Ltd. today announced the development of a new type of resistive RAM(ReRAM), a type of non-volatile memory, which combines low power consumption with limited fluctuation of resistance value.

By changing the structure of the ReRAM by adding titanium (Ti) to nickel oxide (NiO), and by limiting the current flow from the transistor, Fujitsu Labs has successfully reduced the current needed to erase memory to 100 micro-amperes or less. Furthermore, even in high-speed erasure operations requiring only 5 nanoseconds, fluctuation of resistance value which affects the device's quality has been reduced to one-tenth (1/10th) that of conventional ReRAMs. Fujitsu Labs views the new ReRAM as an alternative to flash memory that combines high speed and low power consumption, in a low-cost embedded memory.

Details of this technology were presented at the IEDM (International Electron Devices Meeting), held from December 10-12 in Washington, D.C. (Session: 30.1).

ReRAM is a type of memory that uses material for which the resistance value changes when voltage is applied. ReRAM is amenable to miniaturization and can be manufactured inexpensively, making it attractive as an alternative to flash memory.

An important issue in the development of ReRAM has been the reduction of current required to erase memory. Also, when subjected to repeated, high-speed write and erase operations, ReRAM's resistance value tends to fluctuate, which is known to impair device quality. As such, controlling fluctuation of resistance value is of great importance for ReRAM.

Conventionally, ReRAM devices have been formed from nickel oxide (NiO) films. In Fujitsu Labs' new ReRAM, a NiO film doped with titanium (Ti:NiO) was developed, and its performance was evaluated in combination with a transistor.

As a result, voltage can be increased for memory erasures, and operations require only 5ns, approximately 10,000 times faster than in the past. At the same time, fluctuations in resistance value have been reduced to one-tenth (1/10th). Furthermore, by optimizing the voltage applied to the transistor, current required for an erase operation is reduced to 100 micro-amperes or less.

By utilizing this new material, Fujitsu Labs created a prototype ReRAM device that features low fluctuation of resistance value, even during high-speed operation. As an alternative to flash memory, if further minute non-volatile memory can be realized using ReRAM, there is potential for higher performance of mobile devices.

Fujitsu Labs plans to conduct further R&D related to ReRAM, such as development of miniaturization process technologies for ReRAM devices, and design of read and write circuits.
Post #: 1
Page:   [1]
All Forums >> [News Around The Web] >> Science and Tech >> Fujitsu Develops High-Speed ReRAM Page: [1]
Jump to:





New Messages No New Messages
Hot Topic w/ New Messages Hot Topic w/o New Messages
Locked w/ New Messages Locked w/o New Messages
 Post New Thread
 Reply to Message
 Post New Poll
 Submit Vote
 Delete My Own Post
 Delete My Own Thread
 Rate Posts




Forum Software © ASPPlayground.NET Advanced Edition 2.4.5 ANSI

0.047