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Toshiba made the jump to 4Gb flash memory developing. The new 4Gb NAND flash memory enables faster write performance by implementing advanced design concept and adjusting the control system of the memory cell. Samples of the new 4Gb NAND flash memory will be available in April at a unit price of 12,000 yen and mass production is expected to begin in the third quarter of 2004 at a monthly capacity of 300,000 units.

Toshiba also announced an 8Gb NAND flash memory IC that stacks two of the 4Gb NAND flash memories in a single package. Stacking the new 4Gb NAND flash memories in a single TSOP (Thin Small Outline Package) opens the way to more powerful applications that enhance the performance of digital consumer electronic devices while supporting their miniaturization.

NAND flash memory offers high density, non-volatile data retention and is widely employed in flash memory cards and as embedded memory in digital consumer products, such as digital still cameras, PDAs, and multifunction cell phones. With the introduction of the new devices, Toshiba's NAND flash memory component line-up will range from 128-megabit to 8Gb (stacked version) devices.

Toshiba has also announced plans to introduce a sample of 16Gb NAND flash memory IC that stacks four of the 4Gb NAND flash memories in a single package in the third quarter of 2004.