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Appeared on: Friday, December 28, 2001
OES reveals GaN violet-light laser diode

The Optoelectronics and Systems Laboratories (OES) of the Industrial Technology Research Institute (ITRI) has successfully developed Taiwan’s first gallium nitride (GaN) violet-light laser diode and has scheduled a formal launch for December 28.

GaN laser diodes are commonly used in pick-up heads for high-density DVD disc drives, offering 15Gbit storage capacity. OES has completed development using the MOCVD (metallo-organic chemical vapor deposition) process on epitaxial wafers. OES has also developed GaN LEDs (light-emitting diodes), which are being used to make new LED lightboards with a longer life span and better heat dispersion.


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