Rambus Develops R+ DDR4/3 PHY on Samsung 28nm LPP Process - Printer Friendly version without Comments

Appeared on: Tuesday, February 10, 2015
Rambus Develops R+ DDR4/3 PHY on Samsung 28nm LPP Process

Rambus has developed an R+ DDR4/3 PHY on the Samsung 28nm LPP process. The new design has been characterized at a system level, and can be easily integrated into a SoC.

The Rambus R+ DDR4 multi-modal memory PHY offers performance and is compatibile with industry standard DDR4, and DDR3 interfaces. Designed for server, compute, networking and consumer applications, the R+ DDR4 PHY delivers configuration options for both area/power optimized consumer applications and performance intensive compute applications. The DDR4 IP product supports data rates from 800 to 3200Mbps in a low-power process and is available in both PoP and discrete packages.