Samsung has started producing embedded multi-chip
package (eMCP) memory for use in the expanding market
segment for entry- to mid-level smartphones.
Samsung's new eMCP solutions come in a wide range of
densities, utilizing LPDDR2 (low power
double-data-rate 2) DRAM made with 30 nanometer (nm)
class process technology and NAND flash memory using
20nm-class technology.
Samsung's embedded MCP solutions are fabricated in
packages that consist of a four gigabyte (GB) e-MMC
(Embedded MultiMediaCard) based on 20nm-class NAND
flash memory for data storage, and a choice of 256
megabytes (MB), 512MBs or 768MBs of 30nm-class LPDDR2
DRAM for supporting high-performance mobile device
systems. (Each is equivalent to 2Gb, 4Gb and 6Gb,
respectively.)
The 30nm-class LPDDR2 DRAM chip in the new eMCPs
performs a key role in enhancing the performance of
entry- to mid-level smartphones with a data
transmission speed of 1,066 megabits per second
(Mbps), which doubles the performance of the
industry's previous mobile DRAM (MDDR). When compared
to a 40nm-class LPDDR2 DRAM, the new 30nm-class LPDDR2
DRAM increases performance by approximately 30
percent, while consuming 25 percent less power. Also,
applying the 30nm-class process technology improves
chip manufacturing productivity by 60 percent over
40nm-class technology.
Samsung began providing high-performance 30nm-class
4Gb LPDDR2 DRAM in March of last year. In October,
Samsung came up with high-density solutions such as a
2GB LPDDR2 package that stacks four 4Gb LPDDR2 DRAM
and also first started using 30nm-class LPDDR2 DRAMs
for eMCPs. Focusing on the high-end smartphone market,
Samsung's previous eMCPs combined 1GB of 30nm-class
LPDDR2 DRAM with 32GBs of eMMC memory using 20nm-class
NAND flash.