Samsung today announced the development of 32 gigabyte (GB) double data rate-3 (DDR3) registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) through silicon via (TSV) package technology.
Samsung's 30 nanometer (nm) class technology leverages module
performance and power features to deliver a substantially greener
memory solution than the preceding 40nm-class based modules.
Engineering samples have been released for evaluation.
"These 32GB RDIMMs fully support the high-density and
high-performance requirements of next-generation high-capacity
servers," said Wanhoon Hong, executive vice president, memory sales
& marketing, Device Solutions, Samsung Electronics. "We will keep
providing memory solutions with higher performance and density,
while enhancing shared value in the design of ever-greener server
systems," he added.
The new 32GB RDIMM with 3D TSV package technology is based on
Samsung's 30nm-class four gigabit (Gb) DDR3. It can transmit at
speeds of up to 1,333 megabits per second (Mbps), a 70 percent gain
over preceding quad-rank 32GB RDIMMs with operational speeds of
Further, the 32GB-module consumes a mere 4.5 watts per hour - the
lowest power consumption level among memory modules adopted for use
in enterprise servers. Compared to the 30nm-class 32GB load-reduced,
dual-inline memory module (LRDIMM), which offers advantages in
constructing 32GB or higher memory solutions, the new 32GB module
provides approximately 30 percent additional energy savings.
These savings are directly attributable to the adoption of TSV
technology, which enables a multi-stacked chip to function at levels
comparable to a single silicon chip by shortening signal lines
significantly, thereby lowering power consumption and achieving
higher density and operational speed.
Samsung has collaborated with CPU and controller designers in
addition to some current server system customers to facilitate
quicker adoption of 3D-TSV server modules, and to pave the way for
more easily supporting 32GB and higher-density memory modules based
on 20nm-class DDR3 for use in high-capacity servers.