To print: Select File and then Print from your browser's menu.

    -----------------------------------------------

     This story was printed from CdrInfo.com,

     located at http://www.cdrinfo.com.

    -----------------------------------------------

Micron Technology, Inc. today announced that early engineering samples are available for its third-generation reduced latency DRAM (RLDRAM 3 memory).

RLDRAM 3 is a low-latency, high-bandwidth DRAM that's designed for demanding networking tasks and L3 cache, as well as other applications that require back-to-back READ/WRITE operations or completely random access.

Designed for high-performance networking applications, including high-end routers and switches that require back-to-back READ/WRITE operations or completely random access, RLDRAM 3 memory can be used in 40 Gigabit Ethernet (GbE) and 100 GbE designs, packet buffering and inspection, and lookup tables. Additionally, RLDRAM 3 memory offers significant improvements in speed, density, latency and power consumption.

RLDRAM 3 memory provides sustainable data rates up to 2133 megabits per second (Mb/s) and offers a random access latency of sub-10 nanoseconds. It also offers greater energy efficiency through familiar 1.2V IO and 1.35V core voltage levels.

Micron today also announced that Integrated Silicon Solution, Inc. (ISSI) will become an alternate supplier of Micron's RLDRAM 3 memory, providing assurance of commercial volume and longevity for networking customers.

Micron is expected to begin production of RLDRAM 3 memory during the second half of 2011.