Elpida Memory today announced it has begun sample shipments of its
newly developed 30nm process 4-gigabyte DDR3 SO-DIMM.
The new memory module was built using currently available advanced
30nm process DRAM manufacturing technology and is composed of sixteen
2-gigabit DDR3 SDRAMs. It achieves a high density of 4 gigabytes.
Compared with Elpida's 40nm DRAM module, the new product uses 20%
less operating current and 30% less standby current consumed by PC
systems, and as a DRAM module it achieves one of the lowest levels of
current consumption in the industry.
Also, the new module offers a data transfer rate of up to 1866
Megabits per second (Mbps). It can support the high performance and
high functionality of computer devices that have to manage steadily
increasing data volumes.
Elpida plans to begin mass manufacture of the 4-gigabyte DDR3 SO-DIMM
in the first quarter of CY 2011.
Part Number: EBJ41UF8BDS0
Design Process: 30nm CMOS
Density: 4-Gigabyte
Monolithic Device: 2-Gigabit DDR3 SDRAM (x8-bit), x 16
Data Transfer Rates: 1866Mbps (Max.)
Supply Voltage: 1.5V ± 0.075V
Operating Case Temperature Range
(TC): 0 to +95°C
Package: 204-pin SO-DIMM