New ZrO2 dielectric material increases performance of CMOS-compatible embedded DRAM
NEC Electronics Corporation announced its new metal insulator metal (MIM) technology for 90
nanometer (nm) embedded DRAM (eDRAM), called MIM2. In addition, to meet the technical
challenges presented by moving the company's established CMOS-compatible eDRAM
technology to a 90 nm process, NEC Electronics, ahead of other vendors, has adopted the
use of zirconium oxide (ZrO2), a new dielectric material with a higher-k factor that allows the
embedded DRAM's smaller bit cells to retain storage capacitance. With this new ZrO2
technology, NEC Electronics, a leader and pioneer of CMOS-compatible eDRAM, is well
positioned to move its eDRAM technology to even smaller process geometries as it evolves.
The new dielectric material and MIM2 technology enable NEC Electronics to deliver robust
eDRAM solutions with smaller cell sizes and higher memory integration, ample storage
capacitance and lower cell heights, all the while maintaining the merits of existing eDRAM
technology, such as CMOS-compatibility, low power and high-speed random access to the
eDRAM.
NEC Electronics' eDRAM technology provides a wide range of macro variants, ranging from
the high performance to the low power consumption required by a variety of applications,
including high-end networking devices and consumer electronics products such as cell
phones, mobile handheld devices and gaming/entertainment devices. The full macro lineup for
NEC Electronics' 90 nm ASIC series, CB-90, is scheduled to be ready by September 2005.
(Availability is subject to change without notice.) More information can be found at
www.necelam.com/eDRAM90.