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SK hynix said Wednesday it has developed the industry's fastest mobile dynamic access memory (DRAM) chip that is four times faster than the existing Low Power DDR4 (LPDDR4), adding the mass production is ready to begin next year.
The "Wide IO2 mobile DRAM" is the fastest 8-gigabit memory chip built using the 20nm technology to boast a data processing speed of 51.2 GB per second, significantly higher than the 12.8 GB posted by LPDDR4, the company said.
While LPDDR4 has 32 I/Os (input/ouput) at 3,200 Mbps speed, the Wide IO2 mobile DRAM boasts 512 units of I/Os, each processing data at the speed of 800 Mbps. Wide IO2 supports capacities of up to 32GB and it is operating using the same 1.1V also used by LPDDR4.
SK hynix added samples for the model have been distributed to System-on-Chip manufacturers and added the mass production will begin in the second half of 2015.
The chipmaker also said it plans to apply Through Silicon Via (TSV) technology to the Wide IO2 products in the future.
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