|
|
Wednesday, July 13, 2011
|
Hynix and Toshiba To Develop MRAM
|
|
You are sending an email that contains the article
and a private message for your recipient(s). |
| Your Name: |
|
| Your e-mail: |
* Required! |
| Recipient (e-mail): |
* |
| Subject: |
* |
| Introductory Message: |
|
HTML/Text
(Photo: Yes/No) |
(At the moment, only Text is allowed...)
|
| |
|
| Message Text: |
Hynix Semiconductor and Toshiba have agreed to strategic collaboration in the joint development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM), a fast emerging next generation memory device.
Once technology development is successfully completed, the companies intend to
cooperate in manufacturing MRAM products in a production joint venture. Hynix and
Toshiba have also extended their patent cross licensing and product supply
agreements.
Toshiba recognizes MRAM as an important next-generation memory technology with the
potential to sustain future growth in its semiconductor business. Hynix has a
cutting-edge memory technology, most notably in manufacturing process optimization
and cost competitiveness.
MRAM uses magnetic properties to store data. Unlike DRAM, which distinguishes
between 0 and 1 by passing an electron through a capacitor, data in MRAM can be
determined by measuring the difference in resistance from magnetization on a
magnetic tunnel junction (MTJ). Data is written and saved by reorienting the
magnetization of a thin magnetic layer in a tunnel magnetoresistance (TMR) element
using a spin-polarized current.
The non-volatile, power efficient memory, operates at ultra-high speed.
Applications requiring high-density memory are expected to take advantages of
MRAM, and major initial applications are expected in the mobile market, which
notably demands low power consumption.
Developing a new technology is always prone to risk. One reason for merging the
necessary resources and expertise from Hynix and Toshiba is to minimize risk and
to accelerate the pace of MRAM commercialization.
"MRAM is a rare gem full of exciting properties, like ultra high-speed, low power
consumption, and high capacity, and it will play the role of key factor in driving
advances in memories. It will also be a perfect fit for growing consumer demand in
more sophisticated smart phones. MRAM is our next growth platform," said Oh Chul
Kwon, Hynix's CEO.
"We believe that MRAM has huge potential as highly scalable non-volatile RAM,"
said Kiyoshi Kobayashi, Corporate Senior Vice President of Toshiba Corporation,
and President and CEO of Toshiba's Semiconductor and Storage Products Company. "We
will strongly promote initiatives in integration of storage solutions including
MRAM, NAND, and HDD. The MRAM joint development program with Hynix is one of the
key steps to support our efforts." |
|
|
|
|