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Thursday, July 22, 2010
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Samsung and Toshiba to Support New Standardized NAND
Specification
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Samsung and Toshiba today announced their commitment to
development of the most advanced high-performance NAND flash
memory technology available today ? a double data rate (DDR)
NAND flash memory with a 400 megabit-per-second (Mbps)
interface, toggle DDR 2.0 specification.
The high-performance NAND memory is expected to be of
immediate benefit to a host of NAND-based mobile and
consumer electronics applications, especially where there is
consumer demand for an extra stretch in performance. Both
companies will support a standard industry specification to
enable broad-scale acceptance of this new high-speed
technology.
"Our introduction of high-speed 30 nanometer class NAND late
last year served as an initial pathway for stimulating
acceptance of the new high-performance toggle DDR
technology," said Dong-Soo Jun, executive vice president,
memory marketing, Samsung Electronics. "Now, continual
upgrades in high-speed performance will create new
applications and broader market opportunities for NAND flash
memory. The rapid adoption of fourth generation (4G)
smartphones, tablet PCs and solid state drives is expected
to drive demand for a broader range of high-performance NAND
solutions."
"Toggle DDR provides a faster interface than conventional
NAND using an asynchronous design, delivering the benefits
of high-speed data transfer to a wider market, such as for
solid state drive (SSD) applications including enterprise
storage, mobile phones, multimedia terminals and consumer
products," said Masaki Momodomi, Technical Executive, Memory
product, Toshiba Corporation. "And we will continue to make
the best effort possible to create standard, high-speed NAND
Flash interface solutions with NAND vendors and customers,
which will accelerate the revolution in storage
applications."
The current toggle DDR 1.0 specification applies a DDR
interface to conventional single data rate (SDR) NAND
architecture. The resulting NAND chip has a 133Mbps
interface.
Samsung and Toshiba will focus on assuring a 400Mbps
interface for the toggle DDR 2.0 specification, which
provides a three-fold increase over toggle DDR 1.0, and a
ten-fold increase over 40Mbps SDR NAND in widespread use
today.
Last month, each company started participating in
standardization efforts for the new technology through the
JEDEC Solid State Technology Association. |
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