Thursday, October 30, 2014
Search
  
Wednesday, January 13, 2010
 Samsung Announces 30nm-class, High-density NAND Flash for Mobile Devices
You are sending an email that contains the article
and a private message for your recipient(s).
Your Name:
Your e-mail: * Required!
Recipient (e-mail): *
Subject: *
Introductory Message:
HTML/Text
(Photo: Yes/No)
(At the moment, only Text is allowed...)
 
Message Text: Samsung today announced two high-density memory solutions for mobile devices - a 64-gigabyte (GB) moviNAND memory device and a 32GB micro secure digital (microSD) memory card.

The memory solutions are based on Samsung's 32 gigabit (Gb) NAND flash. The 64GB moviNAND, which measures 1.4mm in height, consists of 16 30nm-class 32Gb MLC NAND chips and a controller. The 17-die stack was achieved by using 30-micron thick chips and advanced package technology. With the new 64GB solution, Samsung's proprietary embedded memory, moviNAND, is now available in 64GB, 32GB, 16GB, 8GB and 4GB densities.

The 32GB microSD card, developed this month, stacks eight 32Gb NAND components and a card controller. The production-ready microSD card is enabled by the use of Samsung's 30-nm class 32Gb NAND flash memory technology. Previously, the highest density microSD card in production had a 16GB capacity and was based on 40nm-class 16Gb NAND. The new 32GB card is 1mm-thick. The portion of the card that is inserted into a handset measures just 0.7 mm in height.

According to market research firm iSuppli, the global NAND flash memory market for 32GB and higher memory cards is forecast to be 530 million units in 2010 and reach 9.5 billion units by 2013 (in 16Gb equivalent units).

Samsung?s new 64GB moviNAND has been in mass production from December 2009, while the 32GB microSD is now being sampled, with mass production expected next month.

 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .