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Monday, April 27, 2009
 Hynix Develops First 54nm High Speed Mobile 1Gb DDR2 DRAM
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Message Text: Hynix Semiconductor, announced that it has developed the first mobile 1Gb DDR2 DRAM using 54nm process technology.

By successfully developing a 50nm-class process, Hynix has overcome the challenge of producing mobile DRAMs with both high speed and low power consumption features.

This device is offered at a maximum speed of 1066MHz, and with 32-bit I/O, boasts bandwidth of 4.26GB/s(Giga byte per second) on a single channel device and 8.52GB/s on a dual channel. Hynix?s 'One Chip Solution' design, offers flexible options with 2-bit or 4-bit prefetch, and 16 or 32-bit I/O on a single chip. Additionally, Hynix?s new mobile DDR2 is an eco-friendly device since it consumes only 50% of power compared to the previous generation mobile DDR, and 30% compared to standard DDR2 DRAM.

The product complies with the JEDEC standards, and is well suited for next generation mobile applications such as MID (Mobile Internet Device), NetBooks and High-end smartphones requiring high bandwidth and extended battery life.

The product is available in JEDEC standard packages and also in custom packages to meet a wide range of user requirements.

Hynix plans to start mass production of this product in the second half of this year.
 
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