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Tuesday, October 28, 2008
 Toshiba to Launch 43nm SLC NAND Flash Memory
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Message Text: Toshiba today announced the launch of a new line-up of 43nm single-level cell (SLC) NAND flash memory products available in densities ranging from 512Mbits to 64 gigabits and in a total of 16 versions.

The new range includes three products, 16Gb, 32Gb and 64Gb, which integrate monolithic 16Gb chips fabricated with 43nm generation process technology, the highest density chips available. The new devices will start to come to market in the first quarter of 2009, toshiba said.

SLC chips can read and write large amounts of data at high speed, support a very large number of read and write times, and offer high-level reliability. Toshiba's line-up offers support for mobile phones, flat panel TVs, OA equipment, and servers.

In recent years, Toshiba Corporation has promoted expansion of the NAND flash memory market by accelerating development of high density multi-level-cell (MLC) chips to be used for high capacity data storage in such markets as memory cards and MP3 players. Production of SLC chips has been limited, and with 56nm and 70nm process technologies.

Features of the 16Gb Product

Product Number: TC58NVG4S2EBA00
Density: 16Gb
Power: 3.3V
Program time: 400 microseconds/ page (Typ.)
Delete time: 4 milliseconds/ block (Typ.)

Access time:
40 microseconds (1st)
25 nanoseconds(Serial)

Size: 14mm x 18mm
 
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