Samsung Samples 50-nanometer 16Gb NAND Flash

Wednesday, January 3, 2007

Samsung Samples 50-nanometer 16Gb NAND Flash

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Samsung announced that it is now sampling its 16-gigabit (Gb) NAND flash memory ? the first NAND flash using 50 nanometer (nm) process technology.

The first samples of this high density NAND flash memory have a multi-level cell (MLC) design with a 4Kbyte (KB) page size to enhance both its read and write features. According to Samsung, the new 4KB page function improves the conventional 2KB paging system for MLC NAND flash to double the read speed, while increasing write performance by 150%.

Samsung plans to begin mass producing its 16Gb NAND flash memory in the first quarter of 2007.