Thursday, August 28, 2014
Search
  
Friday, December 22, 2006
 Samsung Exec Pleads Guilty in U.S. Memory Probe
You are sending an email that contains the article
and a private message for your recipient(s).
Your Name:
Your e-mail: * Required!
Recipient (e-mail): *
Subject: *
Introductory Message:
HTML/Text
(Photo: Yes/No)
(At the moment, only Text is allowed...)
 
Message Text: An executive with South Korea's Samsung Electronics Co. Ltd. will plead guilty, serve 10 months in prison and pay a $250,000 fine for conspiring to fix prices of computer memory chips, the U.S. Justice Department said on Thursday.

Young Hwan Park participated in the conspiracy while he was a vice president of sales at Samsung, the world's top memory chip maker, the department said.

Park is currently president of Samsung Semiconductor Inc., the company's U.S.-based subsidiary.

Park also has agreed to assist the Justice Department in its ongoing investigation, which focuses on dynamic random access memory, or DRAM chips, the kind found in all personal computers.

Four other Samsung executives agreed earlier this year to serve prison time and pay fines as a result of the probe, which has netted other memory makers, such as Hynix Semiconductor, also of South Korea, Japan's Elpida Memory, Germany's Infineon Technologies and U.S.-based Micron Technology.

The Justice Department charged Park with conspiring with employees of other memory makers from early 2001 to mid-2002 to fix the prices of memory chips sold to virtually all major U.S. computer makers, including Dell, Hewlett-Packard and Apple.
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .