Next Generation FBDIMM Memory Modules Announced

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Wednesday, April 12, 2006

Next Generation FBDIMM Memory Modules Announced

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Micron Technology announced the production availability of its DDR2 fully buffered dual in-line memory module (FBDIMM) solutions.

Validated in coordination with Intel Corporation, Micron's FBDIMMs provide new advanced channel features that improve performance in applications such as servers, workstations and networking equipment.

Typical DRAM memory subsystems use a stub-bus topology that requires the data signals from the memory controller be electrically connected to the data lines of every DRAM module on the bus. With as many as 72 connections in today's server designs, the signals may degrade where the bus and DRAM devices meet, causing errors-especially as speeds increase.

Micron's FBDIMMs feature an advanced memory buffer (AMB) chip that overcomes these limitations so designers can put more memory into their servers and still keep errors low.

Micron's FBDIMMs are available in densities from 512 megabyte (MB) to 4 gigabyte (GB) and speed grades extending to PC2-5300. Micron's FBDIMMs have received validation by Intel.

For more information visit www.micron.com/.