Infineon, Nanya cooperate on 60nm DRAM Technology

Thursday, September 29, 2005

Infineon, Nanya cooperate on 60nm DRAM Technology

You are sending an email that contains the article
and a private message for your recipient(s).

Your Name:

Your e-mail:

* Required!

Recipient (e-mail):

*

Subject:

*

Introductory Message:

HTML/Text
(Photo: Yes/No)

(At the moment, only Text is allowed...)

Message Text:

German semi-conductors giant Infineon said it had agreed with Taiwan-based partner Nanya Technology to extend their cooperation in the development of DRAM memory chips.

Under the terms of the agreement, the two companies will jointly develop advanced 60-nanometer production technologies for 300-millimeter wafers, starting September 2005, Infineon and Nanya said in a joint statement.

The cooperation was an extension of the existing co-development of the 90-nm and 70-nm production technologies and "will help each partner expand its position in the DRAM market while sharing development costs," the statement said Thursday.

Some 100 people would work on the project and the first 300-mm wafer memory products using the new 60nm process "is expected to leave the production line in 2008," they said.