Sharp Introduces High-Throughput Memory for 3G Mobile Phones

Thursday, July 21, 2005

Sharp Introduces High-Throughput Memory for 3G Mobile Phones

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Sharp Corporation has developed a high-speed combination flash/SCRAM (Smart Combo RAM) memory device featuring a throughput of 320 MBps.

The LRS1887 is designed for the 3G cell phone applications as well as other applications requiring high-speed transfer of large volumes of data. Sharp is currently shipping samples of the LRS1887, and will start mass production in July 2005.

This newly developed LRS1887 high-capacity 512-Mbit combination flash/SCRAM memory uses an AD Bus that multiplexes the address bus, which specifies the memory access target, onto the data bus that transfers data to the CPU chip. This architecture makes it possible to achieve high-speed data transfers at rates as high as 320 MBps without increasing the number of pins required to make external connections as well as keep the 32-bit bus width.