Elpida Memory, Inc. (Elpida), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it will begin mass production of DDR2 SDRAM using advanced 0.10-micron process technology in August 2004. The first products slated for manufacturing utilizing 0.10-micron process technology include high-performance, high-density DRAM products such as DDR2-533 and DDR2-667.
"Elpida strives to offer the industry stable production of high-performance DRAM products," said Yukio Sakamoto, president of Elpida Memory. "Our ability to mass manufacture 0.10-micron DRAM enables us to meet increased demand for advanced DDR2 SDRAM as the industry transitions from DDR to DDR2 architecture."
Elpida plans to increase production capacity of 0.10-micron based products to more than 50% of their 300 mm wafer line capacity by January 2005.
Elpida Memory, Inc. is a manufacturer of Dynamic Random Access Memory (DRAM) with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida offers a broad range of leading-edge DRAM products. Elpida is a joint venture company formed by NEC and Hitachi on December 20, 1999 and has been in operation since April 2000.