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Thursday, May 13, 2004
Samsung enables 3D gaming on cellular handsets


Samsung Electronics announced the latest addition to its Mobile DRAM portfolio, a monolithic 256Mbit, 32-bit wide Double Data Rate (DDR) device that offers the bandwidth needed for photo-realistic 3D gaming in handsets. Samples are available today with mass production scheduled in the second half of 2004.

The device is part of SAMSUNG's growing product family of Mobile Synchronous DRAM solutions that are available as Single Data Rate (SDR) or Double Data Rate (DDR) devices. The Mobile DDR x 32 device supports data transfer rates of up to 266Mbits-per-second per pin, for an aggregate bandwidth of 1.064GB (gigabyte) per second incorporating SAMSUNG's proven 0.10um process technology to effectively implement the mobile memory characteristics.

On-chip features including: Integrated Temperature Compensation Self Refresh Sensors (TCSR), Partial Array Self Refresh (PASR) and Deep Power Down Mode (DPD), offer designers a competitive advantage by enabling systems that more accurately manage power budgets to extend battery life.

SAMSUNG's Mobile DRAM products include SDR and DDR Mobile DRAMs with densities ranging from 64Mb to 512Mb. The Mobile DRAM portfolio also leverages SAMSUNG's advanced packaging technology to deliver solutions in Multi-Chip Packages (MCP). MCP solutions allow Mobile DRAMs to be delivered packaged together with a variety of SAMSUNG memory devices including: NAND Flash, OneNAND Flash, SRAM, and UtRAMs or with ASICs in a System-in-Package (SIP) solution.

The Mobile DDR x 32 device is currently shipping as engineering samples.


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