Monday, July 28, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Motorola Said To Make Google's Next Phablet
Apple-Beats Deal Cleared By Europe
New Ultrastar SAS Solid-state Drives Offer Up To 1.6TB Capacities
PNY Releases Coin Sized Micro M2 Flash Drive
Samsung Delays Tizen Smartphone Launch
Logitech Announces Budget UC Headset
Amazon Offers New 3D Printed Products Store
Bose Says Beats Electronics Infringe its Patents
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > Optical Storage > Sharp f...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, January 12, 2004
Sharp fabricates blue laser diodes using MBE


UK-based Sharp Laboratories of Europe has made the first blue-violet laser diodes to be grown using MBE.

Scientists at Sharp Laboratories of Europe (SLE) have produced the world’s first blue-violet laser diodes fabricated using MBE.

Jonathan Heffernan and colleagues at the UK-based subsidiary of the Japanese electronics giant reported their work in the latest issue of the journal Electronics Letters.

Grown on a sapphire substrate, the ridge waveguide InGaN multiple quantum well lasers operate at room temperature with an output wavelength of 400 nm.

To date, only low-power blue LEDs have been fabricated using MBE. The blue LEDs and lasers developed by Shuji Nakamura and colleagues at Nichia Chemical Industries in Japan in the mid-1990s were all fabricated using MOVPE and this technique has dominated since then.

SLE says that is has a patented MBE system that has been specifically designed for growing GaN devices.

One key advantage of the MBE method is its much lower consumption of source materials for device growth, in particular the amount of ammonia required as the source of nitrogen.

According to Heffernan and colleagues, another significant difference is that the MBE-grown devices require no post-growth thermal annealing to activate the p-type dopant, a process that is required for devices fabricated using MOVPE.

The SLE team is still some way short of producing commercial-grade devices, however. At the laser threshold current of 1.5 A, the operating voltage was 33 V. The threshold current density is approximately 30 kAcm-2.

The lasers currently operate in pulsed mode with a pulsewidth of 200 ns. For commercial applications, a continuous-wave device would be required.


Previous
Next
Size matters to Samsung, Philips in PDP race        All News        Size matters to Samsung, Philips in PDP race
Size matters to Samsung, Philips in PDP race     Optical Storage News      Size matters to Samsung, Philips in PDP race

Get RSS feed Easy Print E-Mail this Message

Related News
Sharp to Exit TV And Home Appliance European Markets
Sharp Develops Free-Form Display
Sharp Introduces new 4K Video Recorder
Sharp Blames Yen For Profit Drop
Sharp To Start Mass Producing Ultra-high Resolution LCDs
Sharp Improves LCD Viewing Angle With New Optical Film
Sharp Reports Improved Results
Sharp Unveils 15.6-inch Windows 8.1 Tablet, 70-inch Big Pad
Sharp Introduces Quattron+ TVs
Sharp Delivers Wireless Audio and Full HD Video With WiSA-Compliant Universal Player
Sanyo Settles LCD Patent Dispute With Sharp
Sharp Reports Quarterly Profit After Two Years

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .