Saturday, October 22, 2016
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
TSMC, GlobalFoundries/Samsung To Present Their 7nm CMOS Platforms At IEDM
Hon Hai Gains Apple Mac Orders From Quanta
AT&T In Advanced Talks With Time Warner On Merger
LG's Next Flagship G6 Smartphone Won't be Modular
Samsung to Exchange Galaxy Note 7 with New Galaxy S8
Qualcomm Said to Be Near A Deal With NXP
AMD Revenue Forecast Falls Short of Estimates
Microsoft Cloud Strength Highlights First Quarter Results
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Optical Storage > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, December 11, 2003
Toshiba, Sony close to 65nm sample production

Toshiba and Sony are close to beginning trial production of semiconductor chips using a manufacturing process more advanced than any in commercial use today, according to official statements.

The technology is capable of making chips with features as small as 65 nanometers and its development is vital for Sony to produce its planned Cell microprocessor. The chip, which it is developing with Toshiba and IBM Corp., is expected to form the heart of its future PlayStation 3 games console and other digital consumer electronics products, but current production technologies are not yet sufficiently advanced to manufacture it in large quantities.

A nanometer is one-billionth of a meter and chip production technology is typically described by the smallest resolution possible. As the resolution gets finer, more components can be crammed onto a chip's surface and that leads to more powerful chips that consume less power.

Toshiba's trial production of sample chips using the 65-nanometer technology will begin in March 2004, said Junichi Nagaki, a spokesman for Toshiba in Tokyo. At that time, the company will turn out system LSI (large scale integrated circuit) chips on a trial line at its Yokohama, Japan, factory and supply them to its customers for evaluation purposes, said the spokesman.

Commercial production of chips using the technology is not expected to begin until the first half of Toshiba's 2005 fiscal year, which is the period from April to September 2005, he said.

The base for that production is planned to be a new factory currently under construction at Toshiba's plant in Oita prefecture, Japan. Construction is scheduled to end in January 2004 and initial production on a 90-nanometer process is to begin in the middle of 2004 after which it will be upgraded to handle the 65-nanometer process. The plant will process 300-millimeter diameter wafers.

The system LSI chips, while falling short of a prototype of the Cell processor, amount to one of the first steps that Sony needs to take towards eventual mass production of the chip.

The trial production plans comes as many semiconductor companies are still in the midst of upgrading from 130-nanometer generation technology to the latest 90-nanometer technology.

VIA Launches USB to IDE Bridge        All News        VIA Launches USB to IDE Bridge
VIA Launches USB to IDE Bridge     Optical Storage News      VIA Launches USB to IDE Bridge

Source Link Get RSS feed Easy Print E-Mail this Message

Related News
Investors Sue Toshiba Over Accounting Scandal
Toshiba Starts Testing System For Future Self-driving Cars
Toshiba, Tohoku Electric and Iwatani Start Study of World?s Largest Hydrogen Energy System
Toshiba Introduces the Value-oriented OCZ TL100 SATA SSD Series
Toshiba Expands 24nm SLC Flash Family with 16Gb Offering
Toshiba Introduces the OCZ VX500 SATA SSD Series
Toshiba to Implement Eyefi Connected Features in Next FlashAir SD Cards
Toshiba Debuts Flashmatrix Technology
Toshiba Announces New BG SSDs with 3-Bit-Per-Cell TLC BiCS FLASH
Toshiba's ZD6000 Dual Port NVMe SSD Offers A Capacity Of 7.68TB
Toshiba PC Business Not Affected By Company's Restructuring
Toshiba Develops High-Speed MTJ Element for Non-Volatile STT-MRAM For 2X nm Generation Transistors

Most Popular News
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .