Sunday, September 25, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Snapchat Introduces 'Spectacles' Smart Glasses, Changes Company name To Snap
Nvidia GPUs Could Return To Apple Macs
Lenovo Brings Fingerprint Authenticated Payments To Laptops
Report Cites Google, Salesforce Interest For Twitter
Dalian Wanda and Sony Enters Team Up in China Movie Business
Apple Develops Amazon Echo-Style Device
ALD Technology Chosen By Samsung, LG For Flexible OLEDs
TSMC To Use Different Processes And 3D Packages Across Future Design Platforms
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Optical Storage > Intel d...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, November 28, 2003
Intel demonstrates next-generation process technology


Intel Corporation has built fully functional SRAM (Static Random Access Memory) chips using 65 nanometre (nm) technology, its next generation high-volume semiconductor manufacturing process. Intel is on track to put this process into production in 2005 using 300mm wafers.

This new 65nm (a nanometre is one-billionth of a meter) process combines higher-performance and lower-power transistors, a second-generation version of Intel's strained silicon, high-speed copper interconnects and a low-k dielectric material. Building chips using the 65nm process will allow Intel to double the number of transistors it can build on a single chip today.

Advanced transistors: Intel's new 65nm process will feature transistors measuring only 35nm in gate length, which will be the smallest and highest performing CMOS transistors in high-volume production. By comparison, the most advanced transistors in production today, found in Intel Pentium 4 processors, measure 50nm. Small, fast transistors are the building blocks for very fast processors.

Strained silicon: Intel has integrated a second-generation version of its high-performance strained silicon into this process. Strained silicon provides higher drive current, increasing the speed of the transistors with only a 2% increase in manufacturing cost.

Copper interconnects with new low-k dielectric: The process integrates eight copper interconnect layers and uses a ”low-k” dielectric material that increases the signal speed inside the chip and reduces chip power consumption.

Intel has used its 65nm process to make fully functional, four-megabit SRAM chips with a very small 0.57µmē cell size. Small SRAM cells allow for the integration of larger caches in processors, which increase performance. The SRAM cells have robust operating characteristics, with a solid noise margin indicating very efficient on/off switching properties. Each SRAM memory cell has six transistors: 10 million of these transistors would fit in one square millimetre, roughly the size of the tip of a ballpoint pen.

“Intel's 65nm process development is progressing well and we are producing these wafers and chips in our development fab,” said Mark Bohr, Intel Senior Fellow and director of process architecture and integration. “By 2005, we expect to be the first company to have a 65nm process in manufacturing.”

The 65nm semiconductor devices were manufactured at Intel's 300 mm development fab (called D1D) in Hillsboro, Oregon, where the process was developed. D1D is Intel's newest fab and contains its largest individual cleanroom measuring 176 000 square feet, which is roughly the size of three-and-a-half football fields.

More information can be found in Intel's Silicon Showcase at www.intel.com/research/silicon.


Previous
Next
Sony to make SCE wholly owned subsidiary        All News        Sony to make SCE wholly owned subsidiary
Sony to make SCE wholly owned subsidiary     Optical Storage News      Sony to make SCE wholly owned subsidiary

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Narrows Gap With Intel In Semiconductor Industry Ranking
Intel Raises Third-Quarter Revenue Expectations
TPG to Buy Intel's McAfee Security Unit
Intel to Buy Movidius To Accelerate Computer Vision Through RealSense
Intel 7th Generation Kaby Lake Processors Released
Intel Introduces New 3D NAND SSDs
Intel to Accelerate Altera, Autonomous Driving
Nvidia Says Intel Is Misleading With Outdated Deep Learning Benchmarks
Intel Says USB-C Audio Could Kill Traditional Headphone Jacks
2016 IDF: From Virtual Reality to Artificial Intelligence to 5G
IDF: Intel Talks About Upcoming Kaby Lake Processors And Optane SSDs
Intel To Produce 10nm ARM-based Chips LG, Others

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .