Wednesday, September 17, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Blackberry Introduces Elegant Porsche Design P9983 Smartphone
Club 3D Launches 4K Docking Station
Logitech Gives You Control of Your Smart Home with the New Harmony Living Home Lineup
New iPads And OS X Yosemite Announcements Expected Next Month
Opera Max Data-savings App to be Embedded into MediaTek's LTE SoCs
Nero 2015 Supports Burning via Smartphone, WiFi Streaming
PMC Delivers 16-port SAS and SATA Storage Controllers
Google, Facebook and Twitter Collaborate On TODO Project
Active Discussions
Yamaha CRW-F1UX
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
 Home > News > Optical Storage > Intel d...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, November 28, 2003
Intel demonstrates next-generation process technology


Intel Corporation has built fully functional SRAM (Static Random Access Memory) chips using 65 nanometre (nm) technology, its next generation high-volume semiconductor manufacturing process. Intel is on track to put this process into production in 2005 using 300mm wafers.

This new 65nm (a nanometre is one-billionth of a meter) process combines higher-performance and lower-power transistors, a second-generation version of Intel's strained silicon, high-speed copper interconnects and a low-k dielectric material. Building chips using the 65nm process will allow Intel to double the number of transistors it can build on a single chip today.

Advanced transistors: Intel's new 65nm process will feature transistors measuring only 35nm in gate length, which will be the smallest and highest performing CMOS transistors in high-volume production. By comparison, the most advanced transistors in production today, found in Intel Pentium 4 processors, measure 50nm. Small, fast transistors are the building blocks for very fast processors.

Strained silicon: Intel has integrated a second-generation version of its high-performance strained silicon into this process. Strained silicon provides higher drive current, increasing the speed of the transistors with only a 2% increase in manufacturing cost.

Copper interconnects with new low-k dielectric: The process integrates eight copper interconnect layers and uses a ”low-k” dielectric material that increases the signal speed inside the chip and reduces chip power consumption.

Intel has used its 65nm process to make fully functional, four-megabit SRAM chips with a very small 0.57µmē cell size. Small SRAM cells allow for the integration of larger caches in processors, which increase performance. The SRAM cells have robust operating characteristics, with a solid noise margin indicating very efficient on/off switching properties. Each SRAM memory cell has six transistors: 10 million of these transistors would fit in one square millimetre, roughly the size of the tip of a ballpoint pen.

“Intel's 65nm process development is progressing well and we are producing these wafers and chips in our development fab,” said Mark Bohr, Intel Senior Fellow and director of process architecture and integration. “By 2005, we expect to be the first company to have a 65nm process in manufacturing.”

The 65nm semiconductor devices were manufactured at Intel's 300 mm development fab (called D1D) in Hillsboro, Oregon, where the process was developed. D1D is Intel's newest fab and contains its largest individual cleanroom measuring 176 000 square feet, which is roughly the size of three-and-a-half football fields.

More information can be found in Intel's Silicon Showcase at www.intel.com/research/silicon.


Previous
Next
Sony to make SCE wholly owned subsidiary        All News        Sony to make SCE wholly owned subsidiary
Sony to make SCE wholly owned subsidiary     Optical Storage News      Sony to make SCE wholly owned subsidiary

Get RSS feed Easy Print E-Mail this Message

Related News
Latest Intel LTE Chipset Certified on China Mobile
Intel Offers Developers Software Tools, Outlines PC Evolution Across New Form Factors
Intel Unveils New Developer Tools, Future Technologies Tablets, Analytics, Wearable Devices and PCs at IDF 2014
New Intel Xeon E5-2600 v3 Processors Released
Intel Turns To Fashionable Wearables With Collaboration With Fossil Group
New Intel Core M Processor Coming In Tablets, Hybrids
Latest Intel Graphics Driver Update Boosts Performance
Opening Ceremony and Intel Reveal MICA Accessory
Intel Hopes To Improve Its Mobile Business With Ex-Qualcomm exec
Intel Unleashes its First 8-Core Desktop Processor For Gaming
Intel Introduces World's Smallest Standalone 3G Modem
Intel Highlights Its Wireless Computing Plans

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .