Thursday, April 24, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Facebook Enjoys High First-quarter Revenue
Qualcomm Reports Less Than Expected 2Q Revenue
iPhone Sales Drive Apple's Record March Quarter Revenue
Travelling Through Time On Updated Google Maps
OnePlus One To Launch Next Month
LG Display Reports First Quarter Results
Toshiba Announces Canvio AeroMobile Wireless SSD
Global Chip Revenue Rises in 2013
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > Optical Storage > Intel d...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, November 28, 2003
Intel demonstrates next-generation process technology


Intel Corporation has built fully functional SRAM (Static Random Access Memory) chips using 65 nanometre (nm) technology, its next generation high-volume semiconductor manufacturing process. Intel is on track to put this process into production in 2005 using 300mm wafers.

This new 65nm (a nanometre is one-billionth of a meter) process combines higher-performance and lower-power transistors, a second-generation version of Intel's strained silicon, high-speed copper interconnects and a low-k dielectric material. Building chips using the 65nm process will allow Intel to double the number of transistors it can build on a single chip today.

Advanced transistors: Intel's new 65nm process will feature transistors measuring only 35nm in gate length, which will be the smallest and highest performing CMOS transistors in high-volume production. By comparison, the most advanced transistors in production today, found in Intel Pentium 4 processors, measure 50nm. Small, fast transistors are the building blocks for very fast processors.

Strained silicon: Intel has integrated a second-generation version of its high-performance strained silicon into this process. Strained silicon provides higher drive current, increasing the speed of the transistors with only a 2% increase in manufacturing cost.

Copper interconnects with new low-k dielectric: The process integrates eight copper interconnect layers and uses a ”low-k” dielectric material that increases the signal speed inside the chip and reduces chip power consumption.

Intel has used its 65nm process to make fully functional, four-megabit SRAM chips with a very small 0.57µmē cell size. Small SRAM cells allow for the integration of larger caches in processors, which increase performance. The SRAM cells have robust operating characteristics, with a solid noise margin indicating very efficient on/off switching properties. Each SRAM memory cell has six transistors: 10 million of these transistors would fit in one square millimetre, roughly the size of the tip of a ballpoint pen.

“Intel's 65nm process development is progressing well and we are producing these wafers and chips in our development fab,” said Mark Bohr, Intel Senior Fellow and director of process architecture and integration. “By 2005, we expect to be the first company to have a 65nm process in manufacturing.”

The 65nm semiconductor devices were manufactured at Intel's 300 mm development fab (called D1D) in Hillsboro, Oregon, where the process was developed. D1D is Intel's newest fab and contains its largest individual cleanroom measuring 176 000 square feet, which is roughly the size of three-and-a-half football fields.

More information can be found in Intel's Silicon Showcase at www.intel.com/research/silicon.


Previous
Next
Sony to make SCE wholly owned subsidiary        All News        Sony to make SCE wholly owned subsidiary
Sony to make SCE wholly owned subsidiary     Optical Storage News      Sony to make SCE wholly owned subsidiary

Get RSS feed Easy Print E-Mail this Message

Related News
Intel To Release Bay Trail-Entry Chip For Budget Tablets
Intel's Quarterly Net Better Than Expected
New Intel Haswell Processors Released
3M, SGI and Intel Showcase New Cooling Technology for Data Centers
Intel Cuts 1,500 Jobs In Costa Rica
Intel Adjusts Its Financial Reporting
Intel Outlines New USB 3.1 Type-C Connectors, Braswell Chip at IDF 2014
Intel Aims At China With New LTE Cat 6 Solution, Mobile SoC
Intel Makes Changes To Edison Chip For Wearables
Intel Invests In Big Data Analytics Company Cloudera
Altera and Intel To Make Multi-Die Devices
Intel Buys Basis, A Fitness Band Maker

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .