Thursday, March 22, 2018
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Google to Develop Its Own Blockchain-Related Technology
Zuckerberg Apologizes For Cambridge Analytica Scandal, Outlines Steps to Protect Users' Data
Mediatek Says There Are No Talks With Broadcom
Seagate Says Its MACH.2 Multi Actuator Technology Breaks Throughput Record, Announces HAMR Reliability Tests
New Apple Watch Bands Feature Spring Colors and Styles
European Commission Proposes Measures to Ensure Companies Pay Fair Tax in the EU
VIVE FOCUS Coming To International Markets Later This Year
Qualcomm's New Snapdragon 845 Virtual Reality Development Kit Coming In Q2
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > ISSCC: ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, February 14, 2018
ISSCC: Samsung Working on 7-nm EUV SRAM, Intel Details 10-nm SRAM

Intel and Samsung presented papers at the International Solid-State Circuits Conference (ISSCC) describing their work on 10-nm SRAM and 7-nm SRAm, respectively, with Samsung's 256-Mbit SRAM to be made with extreme ultraviolet lithography.

Intel says it maintained Moore's law scaling with a 0.0312-mm2 high density and 0.0367-mm2 low-voltage SRAM bitcells made in its 10-nm process.

On the other hand, Samsung's 6T 256-Mbit device has a smaller, 0.026-mm2 bitcell.

Intel's Zheng Gui said that his company's design shows 0.62x0.58x scaling compared to its 14-nm SRAM, which is within 15 percent of the smallest reported 7-nm cell.

Samsung detailed techniques to reduce by 75 percent bitline resistance, one of the biggest challenges for the design. The company also described techniques to reduce by about 20 percent problems with variation in minimum voltage levels. Taejoong Song, a vice president in design enablement at Samsung, said that EUV enables more design flexibility in the number of vias used.

It is not clear when Samsung plans to commercially use of EUV.

TSMC presented an L1 cache compiler now available for its 7-nm process that can operate at data rates up to at least 4.4 GHz. Its 16-nm L1 memories topped out at about 3 GHz.

Qualcomm Announces Wireless Edge Services, 2 Gbps LTE Modem, 5G NR Roadmap        All News        How Chrome's ad Filtering Works
Intel Raises Bug Bounty Awards, Expands Program     PC Parts News      Gen-Z Consortium Releases Its Core Specification 1.0

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Expands its 8-Inch Foundry Offerings with New RF/IoT and Fingerprint Technology Solutions
Intel and Facebook Unveil Next Generation OCP Twin Lakes 1S Server
Samsung's Ruggedized Galaxy Tab Active2 Now Available in the U.S.
Samsung Debuts First 3D Cinema LED Screen Theater in Switzerland
Samsung Introduces 8TB PM883 SATA SSD For Datacenters
Samsung in Talks With Boeing to Bring Mobile Tech To Planes
Intel to Bring Hardware-based Protection to Data Center and PC Processors
Samsung Care Brings Same-Day Authorized Repairs to Galaxy Smartphones
Microsoft Uses AI to Match Human Performance in Translating News from Chinese to English
Samsung Expands Xian Flash Memory Plant
Samsung SDI Showcased Upgraded Lithium-ion Battery Cells at Energy Storage Europe 2018
Buying Broadcom Could be an Option for Intel, If Qualcomm Deal Fail

Most Popular News
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .