Monday, July 16, 2018
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Roku Debuts Roku TV Wireless Speakers
New Windows 10 Upgrade to Bring Changes to Notepad, Edge
YouTube Copyright Match Tool Fights Content Stealing
Amazon to Compete With Cisco in Networking Equipment: report
Twitter, Facebook, Alphabet to Testify at U.S. House hearing
Google's Head Chip Designer Moves to Facebook
U.S. DoJ Indicts 12 Russian Intelligence Officers for Hacking Offenses Related to the 2016 Election
PC Shipments Grew For the First Time in Six Years During the 2Q of 2018
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > QLC NAN...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, October 10, 2017
QLC NAND Flash to Succeed TLC NAND Next Year

Samsung's 4bit/cell flash is on the way and according to the company, the QLC (quad-level cell) NAND chip will contain more information at a lower price.

"QLC NAND flashes are not yet in mass-production, but we are preparing it internally," an official at Samsung Electronics told Business Korea. "QLC NAND flashes can store four times as much data as SLC NAND flashes."

Other NAND flash makers such as Toshiba and SK Hynix are also reportedly preparing for QLC NAND flash production.

The highest capacity flash cells right now are TLC (triple-level cell) with 3 bits/cell. QLC NAND flash stores four bits of data in one cell. But it's harder to make QLC flash as it has slower read and write times than TLC and less endurance at die level.

In order to put a lot of data into one cell, the process must be finer. An SLC NAND flash requires two gates that can distinguish between 1 and 0 in one cell but an MLC NAND flash and a TLC NAND flash needs to be segmented to have four and eight gates.

This also increases difficulties in development and manufacturing. However, more data can be stored on wafers of the same size, which can significantly mark down prices.

According to IHS Markit, TLC NAND flashes accounted for 65% of the global NAND flash market as of the end of the third quarter, exceeding multi-level cell (MLC) NAND flashes (37.5%). Given the fact that TLC NAND flashes and MLC NAND flashes accounted for 56.1% and 43.6% of the market, respectively, at the end of 2016, the market has been shifting rapidly toward TLC NAND flashes this year.

QLC flash should arrive in the first 2018 quarter, according to IHS Markit.

3D NAND Scaling issues

At the Flash Memory Summit this year, Samsung announced its development of 1Tb 3D NAND, which would be used for commercial products launching next year.

Based on the information available on TLC 512Gb 3D NAND with 64-layer on about 130mm2 die size and assuming string stacking of 64-layer.
According to Sang-Yun Lee, CEO of BeSang Inc. BeSang Inc., it will be very difficult to further expand 3D NAND's memory scaling in a vertical direction. For example, in order to implement a much larger 4Tb NAND chip 8 string stacks of 64-layer are needed. The total layer would become 512-layer on 130mm2 die size, which
will take about a year to process a wafer, plus many more weeks for memory logic and a 64-layer cell layer implementation. Therefore, the wafer processing time for a 512-layer will be about 45 to 53 weeks (!).

This would make practically impossible to implement the 4Tb NAND chip. If QLC is considered instead of TLC, there will be an improvement of 25 percent at best. So, a 410-layer will be needed for QLC 4Tb 3D NAND and about nine months (!) of wafer processing time.

Will 3D NAND reach the end of its life span soon?

Apple Enters into Deal Content With Spielberg, NBCUniversal: report        All News        AMD, Intel, ARM, IBM and Others Support the Open Neural Network Exchange Format for AI
PC Market Further Stabilizes As Companies Consolidate Share     PC Parts News      G.SKILL Releases New DDR4 for Intel Coffee Lake Platform

Get RSS feed Easy Print E-Mail this Message

Related News
Micron and Intel Deliver First 1Tb - 4bits/cell QLC 3D NAND Die
Samsung Expands Xian Flash Memory Plant
Micron and Intel to Limit Their NAND Memory Joint Development Program
Intel Showcases 10 nm Updates, a new aspect for Moore's Law, FPGA Progress and 64-Layer 3D NAND for Data Center
Samsung Introduces Tbit V-NAND Memory Solutions
Western Digital Announces Four-bits-per-cell Technology On 3D NAND
Western Digital Announces First 96-Layer 3D NAND Technology
Samsung Electronics Is Considering Adding Second 3D NAND Line in China
Toshiba Demonstrates 64-Layer BiCS FLASH on Client NVM Express SSD
Western Digital Introduces First 512 Gigabit 64-Layer 3D NAND Chip
Micron Announces QuantX Branding For 3D XPoint Memory, Releases 3D NAND flash for Mobile Devices

Most Popular News
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .