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Monday, September 25, 2017
Samsung Foundry Tapes Out eMRAM Test Chip Based on 28nm FD-SOI Process


Samsung Electronics has expanded its FD-SOI process technology portofolio by offering derivatives that include RF and eMRAM.

Samsung already established a full set of FD-SOI design enablement solutions with its partners for the 28-nanometer (nm) FD-SOI (28FDS) process technology.

"Samsung started mass production of its 28FDS process technology last year and reached the desired process maturity earlier than originally scheduled," said Ryan Lee, Vice President of Foundry Marketing at Samsung Electronics. "So far we have taped out more than 40 products based on the FD-SOI process for various customers. With the addition of RF and eMRAM on 28FDS and 18FDS technologies, we expect an increasing number of product engagements."

Samsung eMRAM is the newest addition to the family of embedded non-volatile memories and it offers speed, power and endurance advantages.

"By adding only three layers in the back-end of the process, we can simply integrate the new eMRAM cells into the existing baseline FD-SOI process," said Gitae Jeong, Senior Vice President of the Advanced Technology Development Team at Samsung Electronics. "Combined with Samsung's memory technology leadership and its differentiated FD-SOI technology, we finally succeeded in incorporating eMRAM into various commercial applications"

Samsung has completed its full set of 28FDS technology eco-system solutions with Cadence and Synopsys. Samsung's customers can access Samsung certified 28FDS reference flows from Cadence and Synopsys along with application-specific IP offerings.

Details on the recent updates to Samsung Foundry's process technology including FD-SOI technology roadmap and readiness will be presented at the Shanghai FD-SOI Forum on September 26th, 2017, by ES Jung, Executive Vice President and General Manager of Foundry Business at Samsung Electronics.



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