Saturday, September 23, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Intel Kills Project Alloy VR Headset
New 4K Apple TV will Only Stream iTunes 4K Content
China-backed Canyon Bridge Buys Imagination for £550 million
iPhone 8 Teardown
Uber Lost License to Operate in London
Globalfoundries Asks EU to Probe TSMC
Facebook to Provide Congress With Ads Linked to Russian Internet Research Agency
Casio Announces Connected Watches For Men's G-SHOCK G-STEEL Line
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Micron ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, August 15, 2017
Micron Advances Semiconductor R&D Capabilities with New Boise Facility


Micron hosted an event at its headquarters today to mark the opening of a new facility which could play a critical role in the company's research into breakthrough new memory and storage technologies of the future.

This expanded facility in Boise is the focal point for developing new semiconductor manufacturing processes and designs for the company's future memory and storage technologies. Once developed in the Boise R&D center, these processes are then transitioned into production-scale manufacturing in Micron's network of 12 large scale manufacturing plants (fabs) around the world.

Construction of the new clean-room facility began in October 2015 to create a precision-controlled environment for development and fabrication of advanced memory integrated circuits. The foundation of the building required 24,000 cubic yards of concrete, the equivalent of a concrete truck delivery every hour for 100 days straight. Ten million pounds of steel were used to house this advanced research center, and the structure contains 240 miles of wire in the building alone, enough to reach the International Space Station.

Scott DeBoer, Technology Development Executive Vice President, highlighted that Micron's DRAM technology (1Ynm) has now transitioned from Boise R&D and into Micron's production fab in Hiroshima, Japan. Over the past year, the R&D team has also successfully completed the development process in Boise for 64-layer 3D NAND, and moved the technology from initial development in Boise all the way through to volume production in Micron's Singapore fabs.



Previous
Next
Qualcomm Announces Depth-Sensing Camera Technology Designed for Android Devices        All News        Facebook Marketplace Expands to Europe
CyberLink Launches U Web Communication App for Online Meetings     General Computing News      Facebook Marketplace Expands to Europe

Get RSS feed Easy Print E-Mail this Message

Related News
Micron Brings LPDDR4 and GDDR6 Memory to Autonomous Vehicles
UMC Indicted On Charges of Trade Secret, Following Micron's Suit
Micron Sold the Lexar Brand to Longsys
Micron Expands its NVDIMM-N Portfolio
Micron's New Flagship 9200 NVMe Solid-State Storage Family is Blazingly Fast
Micron Posts Record Revenues in fiscal 3Q17
Micron Lexar Removable Storage Retail Business Discontinued
Crucial BX300 SSD Coming This Summer
Micron's GDDR5X Memory Hits the 16Gbps, Mass Production of GDDR6 on Track For Next Year
SK Hynix and Micron Try To Catch up With Samsung in 10nm DRAM Production
Micron Announces a 4-server-node, All-flash, Accelerated Ceph Storage Solution
Micron Unleashes the Power of NVMe Storage, With New SolidScale System

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .