Sunday, November 19, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Verizon Signs Deal with NFL: report
Microsoft Offers Discounted Games for Xbox Live Gold Members, Sony Unveils PlayStation Deals
Apple HomePod Smart Speaker Won't Be an Option For Holiday Shopping
G.Skill Unveils Trident Z DDR4-4400 32GB CL19 Kit
Spotify Buys Soundtrap
Volkswagen to Invest Over $40 billion on Future Cars
Broadcom Completes Acquisition of Brocade
Tesla Roadster Electric Supercar Accelerates to 60mph in 2.2 sec
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, May 29, 2017
Samsung Electronics Is Considering Adding Second 3D NAND Line in China


Samsung Electronics is considering adding 3D NAND memory chip production capacity at its manufacturing base in China following the first established in Xi'an in 2014.

If the plan proceed, the second NAND line in the existing Xi'an facility will likely launch production in 2019.

This move is part of Samsung's strategy to maintain its leadership in the global NAND flash market, in a situation where its rivals SK Hynix and Micron Technology are beefing up investment in this area of business.

Samsung, the world's biggest memory chip maker by sales, has already invested $7 billion in the Xi'an facility to make 3D NAND memory chips.



Previous
Next
ASUS Introduces X299 Based Motherboards at Computex        All News        New 4GHz Predator DDR4 Memory Debuts at Computex 2017
Google Teams Up With Sharp to Advance Adoption of LCDs in VR     General Computing News      Sharp's President Confirms US Panel Plant Plan

Get RSS feed Easy Print E-Mail this Message

Related News
QLC NAND Flash to Succeed TLC NAND Next Year
Intel Showcases 10 nm Updates, a new aspect for Moore's Law, FPGA Progress and 64-Layer 3D NAND for Data Center
Samsung Introduces Tbit V-NAND Memory Solutions
Western Digital Announces Four-bits-per-cell Technology On 3D NAND
Western Digital Announces First 96-Layer 3D NAND Technology
Toshiba Demonstrates 64-Layer BiCS FLASH on Client NVM Express SSD
Western Digital Introduces First 512 Gigabit 64-Layer 3D NAND Chip
Micron Announces QuantX Branding For 3D XPoint Memory, Releases 3D NAND flash for Mobile Devices

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .