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Tuesday, February 07, 2017
Rambus Introduces 14nm High Bandwidth Memory PHY For Data Centers


Rambus is making available its High Bandwidth Memory (HBM) Gen2 PHY developed for GLOBALFOUNDRIES FX-14TM ASIC Platform.



Built on the GLOBALFOUNDRIES 14nm FinFET (14LPP) process technology, the Rambus HBM PHY is aimed at networking and data center applications and designed for systems that require low latency and high bandwidth memory. This PHY is fully compliant with the JEDEC HBM2 standard and supports data rates up to 2000 Mbps per data pin, enabling a total bandwidth of 256 GB/s.

The Rambus HBM PHY delivers high performance with lower power consumption when compared to other memory solutions. It combines 2.5D packaging with a wider interface (1024 bits) at a lower clock speed, which results in a higher overall throughput while remaining energy efficient for even the most high-performance computing applications. Rambus experts perform complete signal and power integrity analysis on the entire 2.5D systems to ensure all signal and thermal requirements are met.



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