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Monday, May 02, 2016
Samsung Develops 3rd Generation 14-Nano FinFET Low-power Process


Samsung Electronics is introducing its third 14-nano FinFET system semiconductor process that has lower electricity consumption.

Samsung Electronics’ System LSI Business Department said that it would sonn be completing the development of LPC (Low-Power Compact) 14-nano FinFET process. Strategic partners of Samsung Electronics’ foundry business are predicting that this process can be used by end of this year.

Samsung Electronics mass-produced LPE (Low Power Early) Chips, which are 1st generation chips, last year. The company than started mass-production of 2nd generation 14-nano LPP66 (Low Power Plus) chips that have 15% lesser electricity consumption compared to LPE chips.

Currently the Exynos 8 Octa Series and Qualcomm’s Snapdragon 820 that are powering the Galaxy S7 devices are mass-produced through 14-nano LPP process.

The 3rd generation LPC process consumes less electricity and futher lowers the production cost of the 2nd generation LPP.

Qualcomm, Samsung Electronics and Mediatek recently introduced new 14 and 16-nano AP products. They will be also used for Snapdragon 443 625, Exynos 7870, and Mediatak's Helio P20.

As Samsung Electronics adds 14-nano LPC process, it is predicted that it will compete with TSMC in securing customer orders. TSMC currently has 3 types of 16-nano FinFET processes. The company announced its first 16-nano FinFET process at the end of 2014.



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