SK Hynix has started shipping mass production volumes of 1st generation High Bandwidth Memory (HBM1) based on its 20nm-class DRAM process technology.
HBM1 represents a leap in performance by enabling a 1,024 bit wide memory interface to achieve 128GB/second performance while reducing power by 50% over traditional GDDR5 DRAM solutions.
The new memory utilizes through-silicon-via technology and microbumps to interconnect 4 DRAM die and 1 base die to achieve 1GB DRAM density per device. High Bandwidth Memory is designed to be assembled onto interposers allowing high speed memory interconnect to GPUs, CPUs, ASICs and FPGAs.
AMD announced the Radeon R9 Fury X, the world’s first graphics card with HBM technology. The AMD Radeon R9 Fury X graphics card utilizes 4GB HBM1 to achieve up to 512GB/second memory bandwidth performance while reducing memory subsystem power by up to 85%.
The 1.2V 1GB HBM1 device is available now in production quantities.