South Korean tech giant Samsung Electronics said Thursday it has launched mass-production of 20nm six gigabit (Gb) low-power double data rate 3 (LPDDR3) for the first time in the industry, six months after it successfully started manufacturing 20nm PC DRAMs.
Samsung?s new 6Gb LPDDR3 has a per-pin data transfer rate of up to 2,133 megabits per second (Mbps). A 3GB (gigabyte) LPDDR3 package, which consists of four 6Gb LPDDR3 chips, can be created for use in a wide range of mobile devices.
The new 3GB package is more than 20 percent smaller and consumes about 10 percent less energy than the currently available 3GB package with 6Gb LPDDR3 chips fabricated using Samsung?s previously lowest process technology. This results in a mobile memory that is ultra-small, thin, fast and more power-efficient.