Sunday, October 04, 2015
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Microsoft Buys Havok
Google Officially Becomes Alphabet
Microsoft Works On A Laptop Battery System That Adapts To Your Habits To Last Longer
Motorola Outlines Android Marshmallow Update Plans
AMD FirePro Graphics Powers New Dell Precision Mobile Workstations
Globalfoundries Said To Move To 10nm Development On Its Own
Nvidia Launches New Maxwell-based Quadro graphics For Mobile workstations
Microsoft Expands Licensing Agreements With Asus, I-O Data
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, August 27, 2014
Samsung Starts Mass Production Of First 3D TSV DDR4 Modules

Samsung has started mass producing the first 64 gigabyte (GB), double data rate-4 (DDR4), registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) "through silicon via" (TSV) package technology.

The new RDIMMs include 36 DDR4 DRAM chips, each of which consists of four 4-gigabit (Gb) DDR4 DRAM dies. The low-power chips are manufactured using Samsung's most advanced 20-nanometer (nm) class process technology and 3D TSV package technology.

Samsung's has also started producing 3D Vertical NAND (V-NAND) flash memory last year. While 3D V-NAND technology embraces high-rise vertical structures of cell arrays inside a monolithic die, 3D TSV is an innovative packaging technology that vertically interconnects stacked dies.

To build a 3D TSV DRAM package, the DDR4 dies are ground down as thin as a few dozen micrometers, then pierced to contain hundreds of fine holes. They are vertically connected through electrodes that are passed through the holes. As a result, the new 64GB TSV module performs twice as fast as a 64GB module that uses wire bonding packaging, while consuming approximately half the power.

In the future, Samsung believes that it will be able to stack more than four DDR4 dies using its 3D TSV technology, to create even higher density DRAM modules.

Larger iPad Coming Next Year        All News        HP Recalls Millions Of Power Cords
Larger iPad Coming Next Year     PC Parts News      HP Recalls Millions Of Power Cords

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung To Use Snapdragon 820 Chips In Some Galaxy S7 Phones: report
Samsung Rejects Press Claim On TV Compliance Testing
Samsung Expands Radiant360 Speaker Series
Samsung SE370 Is The First Wireless Charging Monitor
Samsung Gear S2 Coming In the U.S. October 2
Samsung Pay Launches In The U.S.
Samsung Opens New Semiconductor Component Headquarters for Americas
Samsung and Sectra To Work On Secure Smartphones for European Governmental Agencies
Next Generation of S Health Expands Compatibility to Other Android Devices
New Samsung 950 PRO SSD Reads At 2500MBps
Samsung To Follow Apple With Galaxy Leasing Program
Appeals Court Rules In Favor Of Apple In Case Against Samsung

Most Popular News
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .